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PDF D1991A Data sheet ( Hoja de datos )
| Número de pieza | D1991A | |
| Descripción | Silicon NPN epitaxial planer type | |
| Fabricantes | Panasonic Semiconductor | |
| Logotipo |  |
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Transistor
2SD1991A
Silicon NPN epitaxial planer type
For general amplification
Complementary to 2SB1320A
s Features
q High foward current transfer ratio hFE.
q Low collector to emitter saturation voltage VCE(sat).
q Allowing supply with the radial taping.
6.9±0.1
0.7 4.0
Unit: mm
1.05 2.5±0.1
±0.05
(1.45)
0.8
0.65 max.
s Absolute Maximum Ratings (Ta=25˚C)
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
VCBO
VCEO
VEBO
ICP
IC
PC
Tj
Tstg
Ratings
60
50
7
200
100
400
150
–55 ~ +150
Unit
V
V
V
mA
mA
mW
˚C
˚C
0.45+–00..015
2.5±0.5 2.5±0.5
123
Note: In addition to the
lead type shown in
the upper figure, the
type as shown in
the lower figure is
also available.
1:Emitter
2:Collector
3:Base
MT1 Type Package
1.2±0.1
0.45+–00..105
0.65
max.
(HW type)
s Electrical Characteristics (Ta=25˚C)
Parameter
Symbol
Conditions
min typ max Unit
Collector cutoff current
Collector to base voltage
ICBO
ICEO
VCBO
VCB = 20V, IE = 0
VCE = 20V, IB = 0
IC = 10µA, IE = 0
1 µA
1 µA
60 V
Collector to emitter voltage
Emitter to base voltage
Forward current transfer ratio
VCEO
VEBO
hFE1*
hFE2
IC = 2mA, IB = 0
IE = 10µA, IC = 0
VCE = 10V, IC = 2mA
VCE = 2V, IC = 100mA
50 V
7V
160 460
90
Collector to emitter saturation voltage VCE(sat)
IC = 100mA, IB = 10mA
0.1 0.3
V
Transition frequency
fT VCB = 10V, IE = –2mA, f = 200MHz 150 MHz
Collector output capacitance
Cob
VCB = 10V, IE = 0, f = 1MHz
3.5 pF
*hFE1 Rank classification
Rank
Q
R
hFE1 160 ~ 260 210 ~ 340
S
290 ~ 460
1
1 page | ||
| Páginas | Total 3 Páginas | |
| PDF Descargar | [ Datasheet D1991A.PDF ] | |
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