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2SC2769 fiches techniques PDF

INCHANGE - Silicon NPN Power Transistor

Numéro de référence 2SC2769
Description Silicon NPN Power Transistor
Fabricant INCHANGE 
Logo INCHANGE 





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2SC2769 fiche technique
INCHANGE Semiconductor
isc Silicon NPN Power Transistor
DESCRIPTION
·High Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 200V(Min)
·High Switching Speed
·High Reliability
APPLICATIONS
·Switching regulators
·DC-DC converter
·Solid state relay
·General purpose power amplifiers
ABSOLUTE MAXIMUM RATINGS(Ta=25)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
250 V
VCEO
Collector-Emitter Voltage
200 V
VCEO(SUS) Collector-Emitter Voltage
200 V
VEBO
Emitter-Base voltage
7V
IC Collector Current-Continuous 10 A
IBB Base Current-Continuous
PC
Collector Power Dissipation
@ TC=25
TJ Junction Temperature
Tstg Storage Temperature Range
5
100
150
-55~150
A
W
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
Rth j-c
Thermal Resistance,Junction to Case 1.25 /W
isc Product Specification
2SC2769
isc Websitewww.iscsemi.cn

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