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TPCC8006-H fiches techniques PDF

Toshiba Semiconductor - Field Effect Transistor

Numéro de référence TPCC8006-H
Description Field Effect Transistor
Fabricant Toshiba Semiconductor 
Logo Toshiba Semiconductor 





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TPCC8006-H fiche technique
TPCC8006-H
TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (U-MOS-H)
TPCC8006-H
High-Efficiency DC-DC Converter Applications
Notebook PC Applications
Portable Equipment Applications
Unit: mm
Small footprint due to a small and thin package
High-speed switching
Small gate charge: QSW = 7.4 nC (typ.)
Low drain-source ON-resistance:
RDS (ON) = 6.5 mΩ (typ.) ( VGS = 4.5 V)
High forward transfer admittance: |Yfs| = 67 S (typ.)
Low leakage current: IDSS = 10 μA (max) (VDS = 30 V)
Enhancement mode: Vth = 1.3 to 2.3 V (VDS = 10 V, ID = 0.2 mA)
Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Unit
Drain-source voltage
Drain-gate voltage (RGS = 20 kΩ)
Gate-source voltage
Drain current
DC (Note 1)
Pulsed (Note 1)
Drain power dissipation (Tc = 25)
Drain power dissipation
(t = 10 s)
(Note 2a)
Drain power dissipation
(t = 10 s)
(Note 2b)
Single-pulse avalanche energy
(Note 3)
Avalanche current
Repetitive avalanche energy
(Tc = 25) (Note 4)
Channel temperature
Storage temperature range
VDSS
VDGR
VGSS
ID
IDP
PD
PD
PD
EAS
IAR
EAR
Tch
Tstg
30
30
±20
22
66
27
1.9
0.7
126
22
1.89
150
55 to 150
V
V
V
A
W
W
W
mJ
A
mJ
°C
°C
Note: For Notes 1 to 4, refer to the next page.
Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings. Please design the appropriate
reliability upon reviewing the Toshiba Semiconductor Reliability
Handbook (“Handling Precautions”/“Derating Concept and
Methods”) and individual reliability data (i.e. reliability test report
and estimated failure rate, etc).
This transistor is an electrostatic-sensitive device. Handle with care.
1
1,2,3:SOURCE 4:GATE
5,6,7,8:DRAIN
JEDEC
JEITA
TOSHIBA
2-3X1A
Weight: 0.02 g (typ.)
Circuit Configuration
8765
1234
2009-07-15

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