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TPCA8107-H fiches techniques PDF

Toshiba Semiconductor - Field Effect Transistor

Numéro de référence TPCA8107-H
Description Field Effect Transistor
Fabricant Toshiba Semiconductor 
Logo Toshiba Semiconductor 





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TPCA8107-H fiche technique
TPCA8107-H
TOSHIBA Field Effect Transistor Silicon P-Channel MOS Type (Ultra-High-speed U-MOSIII)
TPCA8107-H
High-Efficiency DC-DC Converter Applications
Notebook PC Applications
Portable Equipment Applications
CCFL Inverter Applications
Small footprint due to a small and thin package
High-speed switching
Small gate charge: QSW = 9.7 nC (typ.)
Low drain-source ON-resistance: RDS (ON) = 24 mΩ (typ.)
High forward transfer admittance: |Yfs| = 14 S (typ.)
Low leakage current: IDSS = 10 μA (max) (VDS = 40 V)
Enhancement mode: Vth = 0.8 to 2.0 V (VDS = 10 V, ID = 1 mA)
Absolute Maximum Ratings (Ta = 25°C)
Unit: mm
1.27 0.4 ± 0.1
8 0.05 M A
5
0.15 ± 0.05
4 0.595
1
A
5.0 ± 0.2
0.05 S
S
14
Characteristic
Symbol
Rating
Unit
4.25 ± 0.2
Drain-source voltage
Drain-gate voltage (RGS = 20 kΩ)
Gate-source voltage
Drain current
DC (Note 1)
Pulsed (Note 1)
Drain power dissipation (Tc = 25)
Drain power dissipation
(t = 10 s)
(Note 2a)
Drain power dissipation
(t = 10 s)
(Note 2b)
Single-pulse avalanche energy
(Note 3)
Avalanche current
Repetitive avalanche energy
(Tc = 25) (Note 4)
Channel temperature
Storage temperature range
VDSS
VDGR
VGSS
ID
IDP
PD
PD
PD
EAS
IAR
EAR
Tch
Tstg
40
40
±20
7.5
30
30
2.8
1.6
26
7.5
1.9
150
55 to 150
V
V
V
A
W
W
W
mJ
A
mJ
°C
°C
85
1,2,3: SOURCE 4: GATE
5,6,7,8: DRAIN
JEDEC
JEITA
TOSHIBA
2-5Q1A
Weight: 0.069 g (typ.)
Circuit Configuration
8765
Note: For Notes 1 to 4, refer to the next page.
Using continuously under heavy loads (e.g. the application of high
1234
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the
appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling
Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and
estimated failure rate, etc).
This transistor is an electrostatic-sensitive device. Handle with care.
1 2008-10-06

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