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PDF TPCA8039-H Data sheet ( Hoja de datos )
| Número de pieza | TPCA8039-H | |
| Descripción | Field Effect Transistor | |
| Fabricantes | Toshiba Semiconductor | |
| Logotipo |  |
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TPCA8039-H
TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (U-MOSⅥ-H)
TPCA8039-H
High-Efficiency DC-DC Converter Applications
Notebook PC Applications
Portable Equipment Applications
Unit: mm
1.27 0.4 ± 0.1
8 5 0.05 M A
• Small footprint due to a small and thin package
• High-speed switching
• Small gate charge: QSW = 8.6 nC (typ.)
• Low drain-source ON-resistance: RDS (ON) = 3.8 mΩ (typ.)
• High forward transfer admittance: |Yfs| = 99 S (typ.)
• Low leakage current: IDSS = 10 μA (max) (VDS = 30 V)
• Enhancement mode: Vth = 1.3 to 2.3 V (VDS = 10 V, ID = 0.5 mA)
Absolute Maximum Ratings (Ta = 25°C)
0.15 ± 0.05
1 4 0.595
A
5.0 ± 0.2
S 0.05 S
14
Characteristic
Drain-source voltage
Drain-gate voltage (RGS = 20 kΩ)
Gate-source voltage
Drain current
DC (Note 1)
Pulsed (Note 1)
Drain power dissipation (Tc = 25℃)
Drain power dissipation
(t = 10 s)
(Note 2a)
Drain power dissipation
(t = 10 s)
(Note 2b)
Single-pulse avalanche energy
(Note 3)
Avalanche current
Repetitive avalanche energy
(Tc = 25℃) (Note 4)
Channel temperature
Storage temperature range
Symbol
VDSS
VDGR
VGSS
ID
IDP
PD
PD
PD
EAS
IAR
EAR
Tch
Tstg
Rating
30
30
±20
34
102
45
2.8
1.6
150
34
0.19
150
−55 to 150
Unit
V
V
V
A
W
W
W
mJ
A
mJ
°C
°C
4.25 ± 0.2
85
1,2,3:SOURCE 4:GATE
5,6,7,8:DRAIN
JEDEC
―
JEITA
―
TOSHIBA
2-5Q1A
Weight: 0.069 g (typ.)
Circuit Configuration
8765
Note: For Notes 1 to 4, refer to the next page.
Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
1234
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are
within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba
Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual
reliability data (i.e. reliability test report and estimated failure rate, etc).
This transistor is an electrostatic-sensitive device. Handle with care.
1 2008-11-10
1 page  
RDS (ON) – Ta
10
Common source
Pulse test
8
ID = 34 A
8.5 A,17 A
6
VGS = 4.5 V
4
ID = 8.5 A,17 A,34 A
2 VGS = 10 V
0
−80
−40
0
40 80 120 160
Ambient temperature Ta (°C)
TPCA8039-H
IDR – VDS
100
10
4.5
3
10 1
VGS = 0 V
Common source
Ta = 25°C
Pulse test
1
0
−0.2
−0.4
−0.6
−0.8
−1.0
Drain-source voltage VDS (V)
10000
Capacitance – VDS
1000
Ciss
Coss
100
Common source
VGS = 0 V
f = 1 MHz
Ta = 25°C
10
0.1
1
Crss
10 100
Drain-source voltage VDS (V)
Vth – Ta
2.5
2.0
1.5
1.0
Common source
0.5 VDS = 10 V
ID = 0.5 mA
Pulse test
0
−80 −40
0
40 80 120
Ambient temperature Ta (°C)
160
Dynamic input/output
characteristics
50
Common source
ID = 34 A
40 Ta = 25°C
Pulse test
30
VDS
20
VDD = 6 V
12
24
10
0
0 20 40
Total gate charge Qg (nC)
20
16
12
8
4
0
60
5
2008-11-10
5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet TPCA8039-H.PDF ] | |
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