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PDF TPCA8027-H Data sheet ( Hoja de datos )
| Número de pieza | TPCA8027-H | |
| Descripción | Field Effect Transistor | |
| Fabricantes | Toshiba Semiconductor | |
| Logotipo |  |
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TPCA8027-H
TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (Ultra-High-Speed U-MOSⅢ)
TPCA8027-H
Switching Regulator Applications
Motor Drive Applications
Unit: mm
• Small footprint due to a small and thin package
• High-speed switching
• Small gate charge: QSW = 8.1 nC (typ.)
• Low drain-source ON-resistance: RDS (ON) = 8.0 mΩ (typ.)
• High forward transfer admittance: |Yfs| = 44 S (typ.)
• Low leakage current: IDSS = 10 μA (max) (VDS = 40 V)
• Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA)
0.5±0.1 1.27
8
0.4±0.1
5
0.05 M A
0.15±0.05
0.95±0.05
14
5 .0 ± 0 .2
0.595
A
0.166±0.05
Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Unit
S 0.05 S
1 4 1.1±0.2
Drain-source voltage
Drain-gate voltage (RGS = 20 kΩ)
Gate-source voltage
Drain current
DC (Note 1)
Pulsed (Note 1)
Drain power dissipation (Tc=25℃)
Drain power dissipation
(t = 10 s)
(Note 2a)
Drain power dissipation
(t = 10 s)
(Note 2b)
Single-pulse avalanche energy
(Note 3)
Avalanche current
Repetitive avalanche energy
(Tc = 25℃) (Note 4)
Channel temperature
Storage temperature range
VDSS
VDGR
VGSS
ID
IDP
PD
PD
PD
EAS
IAR
EAR
Tch
Tstg
40
40
±20
30
90
45
2.8
1.6
84
30
4.5
150
−55 to 150
V
V
V
A
W
W
W
mJ
A
mJ
°C
°C
4.25±0.2
8
1,2,3:SOURCE
5,6,7,8:DRAIN
JEDEC
5 0.8±0.1
4:GATE
―
JEITA
―
TOSHIBA
2-5Q1A
Weight: 0.080 g (typ.)
Circuit Configuration
8765
Note: For Notes 1 to 4, refer to the next page.
1234
Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the
absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability
Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report
and estimated failure rate, etc).
This transistor is an electrostatic-sensitive device. Handle with care.
Downloaded from Elcodis.com electronic components distributor
1
2008-06-26
1 page  
RDS (ON) – Tc
20
Common source
Pulse test
16
15
12
30
ID = 7.5 A
8
4
0
−80 −40 0 40 80 120
Case temperature TC (°C)
160
TPCA8027-H
100
10
5
10
IDR – VDS
3
VGS = 0 V
11
Common source
Tc = 25°C
Pulse test
0.1
0
−0.2 −0.4 −0.6 −0.8
−1.0 −1.2
Drain-source voltage VDS (V)
10000
Capacitance – VDS
1000
Ciss
Coss
100
Common source
VGS = 0 V
f = 1 MHz
Tc = 25°C
Crss
10
0.1 1 10
Drain-source voltage VDS (V)
100
Vth – Ta
5
4
3
2
Common source
1 VDS = 10 V
ID = 1 mA
Pulse test
0
−80 −40
0
40
80 120
Ambient temperature Ta (°C)
160
Dynamic input/output
characteristics
80
Common source
70
ID = 30 A
Tc = 25°C
Pulse test
60
16
14
12
50
40
VDS
30
20
16
8
VDS = 32 V
VGS
10
8
6
4
10 2
00
0 4 8 12 16 20 24 28 32
Total gate charge Qg (nC)
Downloaded from Elcodis.com electronic components distributor
5
2008-06-26
5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet TPCA8027-H.PDF ] | |
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