DataSheetWiki


TPCA8008-H fiches techniques PDF

Toshiba Semiconductor - Field Effect Transistor

Numéro de référence TPCA8008-H
Description Field Effect Transistor
Fabricant Toshiba Semiconductor 
Logo Toshiba Semiconductor 





1 Page

No Preview Available !





TPCA8008-H fiche technique
TPCA8008-H
TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (MACHⅡπ-MOS)
TPCA8008-H
High Speed Switching Applications
Switching Regulator Applications
DC/DC Converter Applications
Unit: mm
1.27 0.4±0.1
85
0.05 M A
Small footprint due to a small and thin package
High-speed switching
Small gate charge: QSW = 3.7 nC (typ.)
Low drain-source ON-resistance: RDS (ON) = 0.47Ω (typ.)
High forward transfer admittance: |Yfs| = 3.3S (typ.)
Low leakage current: IDSS = 100 μA (max) (VDS = 250 V)
Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA)
0.15±0.05
14
5.0±0.2
0.595
A
0.05 S
S
1
4
Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Drain-source voltage
Drain-gate voltage (RGS = 20 kΩ)
Gate-source voltage
Drain current
DC (Note 1)
Pulsed (Note 1)
Drain power dissipation (Tc=25)
Drain power dissipation
(t = 10 s)
(Note 2a)
Drain power dissipation
(t = 10 s)
(Note 2b)
Single-pulse avalanche energy
(Note 3)
Avalanche current
Repetitive avalanche energy
(Tc=25) (Note 4)
Channel temperature
Storage temperature range
VDSS
VDGR
VGSS
ID
IDP
PD
PD
PD
EAS
IAR
EAR
Tch
Tstg
Note: For Notes 1 to 4, refer to the next page.
Rating
250
250
±20
4
8
45
2.8
1.6
11
4
4.5
150
55 to 150
Unit
V
V
V
A
W
W
W
mJ
A
mJ
°C
°C
4.25±0.2
8
1, 2, 3 : SOURCE
4 : GATE
5, 6, 7, 8 : DRAIN
5 0.8±0.1
JEDEC
JEITA
TOSHIBA
2-5Q1A
Weight: 0.069 g (typ.)
Circuit Configuration
8765
1234
Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the
absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability
Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report
and estimated failure rate, etc).
This transistor is an electrostatic-sensitive device. Handle with care.
1 2007-12-18

PagesPages 7
Télécharger [ TPCA8008-H ]


Fiche technique recommandé

No Description détaillée Fabricant
TPCA8008-H Field Effect Transistor Toshiba Semiconductor
Toshiba Semiconductor

US18650VTC5A

Lithium-Ion Battery

Sony
Sony
TSPC106

PCI Bus Bridge Memory Controller

ATMEL
ATMEL
TP9380

NPN SILICON RF POWER TRANSISTOR

Advanced Semiconductor
Advanced Semiconductor


www.DataSheetWiki.com    |   2020   |   Contactez-nous  |   Recherche