(PDF) TPC8221-H Datasheet

Número de pieza	TPC8221-H
Descripción	MOSFETs
Fabricantes	Toshiba Semiconductor
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No Preview Available ! MOSFETs Silicon N-Channel MOS (U-MOS-H) TPC8221-H 1. Applications • High-Efficiency DC-DC Converters • Notebook PCs • Mobile Handsets 2. Features (1) Small footprint due to a small and thin package (2) High-speed switching (3) Small gate change: QSW = 3.5 nC (typ.) (4) Low drain-source on-resistance: RDS(ON) = 22 mΩ (typ.) (VGS = 4.5 V) (5) Low leakage current: IDSS = 10 µA (max) (VDS = 30 V) (6) Enhancement mode: Vth = 1.3 to 2.3 V (VDS = 10 V, ID = 0.1 mA) 3. Packaging and Internal Circuit TPC8221-H SOP-8 1: Source 1 2: Gate 1 3: Source 2 4: Gate 2 5, 6: Drain 2 7, 8: Drain 1 1 2010-07-08 Rev.1.0 1 page 7. Marking(Note) TPC8221-H Fig. 7.1 Marking Note: A line under a Lot No. identifies the indication of product Labels. Not underlined: [[Pb]]/INCLUDES > MCV Underlined: [[G]]/RoHS COMPATIBLE or [[G]]/RoHS [[Pb]] Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS compatibility of Product. The RoHS is the Directive 2002/95/EC of the European Parliament and of the Council of 27 January 2003 on the restriction of the use of certain hazardous substances in electrical and electronic equipment. 5 2010-07-08 Rev.1.0 5 Page

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PDF TPC8221-H Data sheet ( Hoja de datos )