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Toshiba Semiconductor - NPN Transistor - 2SC5029

Numéro de référence C5029
Description NPN Transistor - 2SC5029
Fabricant Toshiba Semiconductor 
Logo Toshiba Semiconductor 





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C5029 fiche technique
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)
2SC5029
2SC5029
Power Amplifier Applications
Power Switching Applications
Industrial Applications
Unit: mm
Low saturation voltage: VCE (sat) = 0.5 V (max) (IC = 1 A, IB = 0.05 A)
High collector power dissipation: PC = 1.3 W
High-speed switching: tstg = 1.0 μs (typ.)
Complementary to 2SA1892
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
VCBO 50 V
Collector-emitter voltage
VCEO 50 V
Emitter-base voltage
VEBO 5 V
Collector current
IC 3 A
Base current
Collector power dissipation
Junction temperature
Storage temperature range
IB 0.2 A
PC 1.3 W
Tj 150 °C
Tstg
55 to 150
°C
JEDEC
JEITA
TOSHIBA
2-8M1A
Note: Using continuously under heavy loads (e.g. the application of high
Weight: 0.55 g (typ.)
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating
conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report
and estimated failure rate, etc).
1 2006-11-10

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