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Toshiba Semiconductor - Field Effect Transistor

Numéro de référence 2SK4207
Description Field Effect Transistor
Fabricant Toshiba Semiconductor 
Logo Toshiba Semiconductor 





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2SK4207 fiche technique
2SK4207
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSIV)
2SK4207
Swiching Regulator Applications
z Low drainsource ON-resistance: RDS (ON) = 0.78 (typ.)
z High forward transfer admittance:|Yfs| = 11 S (typ.)
z Low leakage current: IDSS = 100 μA (max) (VDS = 720 V)
z Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA)
15.9max.
Unit: mm
Ф3.2±0.2
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Drainsource voltage
Draingate voltage (RGS = 20 k)
Gatesource voltage
Drain current
DC (Note 1)
Pulse (Note 1)
Drain power dissipation (Tc = 25°C)
Single pulse avalanche energy
(Note 2)
Avalanche current
Repetitive avalanche energy (Note 3)
Channel temperature
Storage temperature range
Symbol
VDSS
VDGR
VGSS
ID
IDP
PD
EAS
IAR
EAR
Tch
Tstg
Rating
900
900
±30
13
39
150
491
13
15
150
55 to 150
Unit
V
V
V
A
A
W
mJ
A
mJ
°C
°C
2.0±0.3
1.0
0.3
0.25
5.45±0.2
5.45±0.2
12 3
1: GATE
2: DRAIN (HEATSINK)
3: SOURCE
JEDEC
JEITA
SC-65
TOSHIBA
2-16C1B
Weight: 4.6 g (typ.)
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate
reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/’’Derating Concept and
Methods’’) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Thermal Characteristics
Characteristics
Symbol
Max Unit
Thermal resistance, channel to case
Thermal resistance, channel to ambient
Rth (chc)
Rth (cha)
0.833
50
°C / W
°C / W
Note 1: Ensure that the channel temperature does not exceed 150°C.
Note 2: VDD = 90 V, Tch = 25°C (initial), L = 5.3 mH, RG = 25 , IAR = 13 A
Note 3: Repetitive rating: pulse width limited by maximum channel temperature
This transistor is an electrostatic-sensitive device. Handle with care.
1
2
3
Start of commercial production
2008-02
1 2013-11-01

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