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Numéro de référence | 2SA1964 | ||
Description | Silicon PNP Power Transistor | ||
Fabricant | INCHANGE | ||
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INCHANGE Semiconductor
isc Silicon PNP Power Transistor
Product Specification
2SA1964
DESCRIPTION
·CollectorEmitter Breakdown Voltage
: V(BR)CEO= 160V(Min)
·Good Linearity of hFE
·Wide Area of Safe Operation
·Complement to Type 2SC5248
APPLICATIONS
·Power amplifier applications.
·Driver stage amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE UNIT
VCBO CollectorBase Voltage
160
V
VCEO CollectorEmitter Voltage
160
V
VEBO EmitterBase Voltage
5 V
IC Collector CurrentContinuous
Collector Power Dissipation
@Ta=25℃
PC
Collector Power Dissipation
@TC=25℃
TJ Junction Temperature
Tstg Storage Temperature
1.5
A
2
W
20
150 ℃
55~150 ℃
isc website:www.iscsemi.cn
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Pages | Pages 2 | ||
Télécharger | [ 2SA1964 ] |
No | Description détaillée | Fabricant |
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2SA1962 | SILICON POWER TRANSISTOR | SavantIC |
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