|
|
Numéro de référence | IRF5805PbF | ||
Description | Power MOSFET ( Transistor ) | ||
Fabricant | International Rectifier | ||
Logo | |||
l Ultra Low On-Resistance
l P-Channel MOSFET
l Surface Mount
l Available in Tape & Reel
l Low Gate Charge
l Lead-Free
l Halogen-Free
Description
These P-channel MOSFETs from International Rectifier
utilize advanced processing techniques to achieve the
extremely low on-resistance per silicon area. This
benefit provides the designer with an extremely efficient
device for use in battery and load management
applications.
The TSOP-6 package with its customized leadframe
produces a HEXFET® power MOSFET with RDS(on)
60% less than a similar size SOT-23. This package is
ideal for applications where printed circuit board space
is at a premium. It's unique thermal design and RDS(on)
reduction enables a current-handling increase of nearly
300% compared to the SOT-23.
VDSS
-30V
PD -95340A
IRF5805PbF
HEXFET® Power MOSFET
RDS(on) max
0.098@VGS = -10V
0.165@VGS = -4.5V
ID
-3.8A
-3.0A
D1
6
A
D
D2
5D
G3
4S
Top View
TSOP-6
Absolute Maximum Ratings
Parameter
VDS
ID @ TA = 25°C
ID @ TA = 70°C
IDM
PD @TA = 25°C
PD @TA = 70°C
Drain-Source Voltage
Continuous Drain Current, VGS @ -10V
Continuous Drain Current, VGS @ -10V
Pulsed Drain Current
Maximum Power Dissipation
Maximum Power Dissipation
Linear Derating Factor
VGS
TJ , TSTG
Gate-to-Source Voltage
Junction and Storage Temperature Range
Max.
-30
-3.8
-3.0
-15
2
1.28
0.02
± 20
-55 to + 150
Units
V
A
W
W
W/°C
V
°C
Thermal Resistance
Parameter
RθJA
Maximum Junction-to-Ambient
www.irf.com
Max.
62.5
Units
°C/W
1
04/20/10
|
|||
Pages | Pages 9 | ||
Télécharger | [ IRF5805PbF ] |
No | Description détaillée | Fabricant |
IRF5805PbF | Power MOSFET ( Transistor ) | International Rectifier |
US18650VTC5A | Lithium-Ion Battery | Sony |
TSPC106 | PCI Bus Bridge Memory Controller | ATMEL |
TP9380 | NPN SILICON RF POWER TRANSISTOR | Advanced Semiconductor |
www.DataSheetWiki.com | 2020 | Contactez-nous | Recherche |