IRF5803D2PbF Datasheet PDF - International Rectifier
| Part Number | IRF5803D2PbF | |
| Description | Power MOSFET & Schottky Diode | |
| Manufacturers | International Rectifier | |
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There is a preview and IRF5803D2PbF download ( pdf file ) link at the bottom of this page. Total 11 Pages | ||
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PD- 95160A
l Co-packaged HEXFET® Power
MOSFET and Schottky Diode
l Ideal For Buck Regulator Applications
l P-Channel HEXFET®
l Low VF Schottky Rectifier
l SO-8 Footprint
l Lead-Free
Description
The FETKYTM family of Co-packaged HEXFETs and
Schottky diodes offer the designer an innovative board
space saving solution for switching regulator and
power management applications. HEXFETs utilize
advanced processing techniques to achieve extremely
low on-resistance per silicon area. Combining this
technology with International Rectifier's low forward
drop Schottky rectifiers results in an extremely efficient
device suitable for use in a wide variety of portable
electronics applications.
IRF5803D2PbF
FETKY TM MOSFET & Schottky Diode
A1
A2
8K
7K
VDSS = -40V
S3
6 D RDS(on) = 112mΩ
G4
5D
Schottky Vf = 0.51V
Top View
The SO-8 has been modified through a customized
leadframe for enhanced thermal characteristics. The
SO-8 package is designed for vapor phase, infrared or
wave soldering techniques.
Absolute Maximum Ratings (TA = 25°C Unless Otherwise Noted)
Parameter
Maximum
ID @ TA = 25°C
Continuous Drain Current, VGS @ -10V
-3.4
ID @ TA = 70°C
IDM
Continuous Drain Current, VGS @ -10V
Pulsed Drain Current À
-2.7
-27
PD @TA = 25°C
Power Dissipation
2.0
PD @TA = 70°C
Power Dissipation
1.3
Linear Derating Factor
16
VGS
TJ, TSTG
Gate-to-Source Voltage
Junction and Storage Temperature Range
± 20
-55 to +150
SO-8
Units
A
W
mW/°C
V
°C
Thermal Resistance
Symbol
RθJL
RθJA
RθJA
Parameter
Junction-to-Drain Lead, MOSFET
Junction-to-Ambient , MOSFET
Junction-to-Ambient , SCHOTTKY
Typ.
–––
–––
–––
Notes:
Repetitive rating – pulse width limited by max. junction temperature (see fig. 11)
Pulse width ≤ 400µs – duty cycle ≤ 2%
Surface mounted on 1 inch square copper board, t ≤ 10sec.
Max.
20
62.5
62.5
Units
°C/W
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1
10/7/04
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IRF5803D2PbF
Power Mosfet Characteristics
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
25
50 75 100 125
TC , Case Temperature ( °C)
150
VDS
VGS
RG
RD
D.U.T.
VGS
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
-
+ VDD
Fig 10a. Switching Time Test Circuit
VGS
10%
td(on) tr
td(off) tf
Fig 9. Maximum Drain Current Vs.
Case Temperature
90%
VDS
Fig 10b. Switching Time Waveforms
100
D = 0.50
0.20
10
0.10
0.05
0.02
0.01
1
0.1
0.00001
PDM
SINGLE PULSE
(THERMAL RESPONSE)
t1
t2
Notes:
1. Duty factor D = t1 / t 2
2. Peak TJ = P DM x ZthJA + TA
0.0001
0.001
0.01
0.1
1
t1, Rectangular Pulse Duration (sec)
10
100
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
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Part DetailsOn this page, you can learn information such as the schematic, equivalent, pinout, replacement, circuit, and manual for IRF5803D2PbF electronic component. |
| Information | Total 11 Pages | |
| Link URL | [ Copy URL to Clipboard ] | |
| Download | [ IRF5803D2PbF.PDF Datasheet ] | |
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| Part Number | Description | MFRS |
| IRF5803D2PbF | The function is Power MOSFET & Schottky Diode. International Rectifier | |
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