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IRF5802PbF fiches techniques PDF

International Rectifier - Power MOSFET ( Transistor )

Numéro de référence IRF5802PbF
Description Power MOSFET ( Transistor )
Fabricant International Rectifier 
Logo International Rectifier 





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IRF5802PbF fiche technique
SMPS MOSFET
Applications
l High frequency DC-DC converters
VDSS
150V
PD- 95475A
IRF5802PbF
HEXFET® Power MOSFET
RDS(on) max
1.2W@VGS = 10V
ID
0.9A
Benefits
l Low Gate to Drain Charge to Reduce
Switching Losses
l Fully Characterized Capacitance Including
Effective COSS to Simplify Design, (See D 1
App. Note AN1001)
l Fully Characterized Avalanche Voltage
D2
and Current
l Lead-Free
G3
6D
5D
4S
TSOP-6
Absolute Maximum Ratings
ID @ TA = 25°C
ID @ TA = 70°C
IDM
PD @TA = 25°C
VGS
dv/dt
TJ
TSTG
Parameter
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current 
Power Dissipation„
Linear Derating Factor
Gate-to-Source Voltage
Peak Diode Recovery dv/dt †
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Max.
0.9
0.7
7.0
2.0
0.02
± 30
7.1
-55 to + 150
300 (1.6mm from case )
Units
A
W
W/°C
V
V/ns
°C
Thermal Resistance
RθJA
Parameter
Maximum Junction-to-Ambient„
Notes  through † are on page 8
www.irf.com
Max.
62.5
Units
°C/W
1
07/05/05

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