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IRF5803PbF fiches techniques PDF

International Rectifier - Power MOSFET ( Transistor )

Numéro de référence IRF5803PbF
Description Power MOSFET ( Transistor )
Fabricant International Rectifier 
Logo International Rectifier 





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IRF5803PbF fiche technique
l Ultra Low On-Resistance
l P-Channel MOSFET
l Surface Mount
l Available in Tape & Reel
l Low Gate Charge
l Lead-Free
l Halogen-Free
Description
These P-channel HEXFET® Power MOSFETs from
International Rectifier utilize advanced processing
techniques to achieve the extremely low on-resistance
per silicon area. This benefit provides the designer
with an extremely efficient device for use in battery and
load management applications.
The TSOP-6 package with its customized leadframe
produces a HEXFET® power MOSFET with RDS(on)
60% less than a similar size SOT-23. This package is
ideal for applications where printed circuit board space
is at a premium. It's unique thermal design and RDS(on)
reduction enables a current-handling increase of nearly
300% compared to the SOT-23.
VDSS
-40V
PD-95262B
IRF5803PbF
HEXFET® Power MOSFET
RDS(on) max (mW)
112@VGS = -10V
190@VGS = -4.5V
ID
-3.4A
-2.7A
D1
6
A
D
D2
5D
G3
4S
Top View
TSOP-6
Absolute Maximum Ratings
Parameter
VDS
ID @ TA = 25°C
ID @ TA= 70°C
IDM
PD @TA = 25°C
PD @TA = 70°C
Drain- Source Voltage
Continuous Drain Current, VGS @ -10V
Continuous Drain Current, VGS @ -10V
Pulsed Drain Current 
Power Dissipation ƒ
Power Dissipation ƒ
Linear Derating Factor
VGS
TJ, TSTG
Gate-to-Source Voltage
Junction and Storage Temperature Range
Thermal Resistance
RθJA
Parameter
Maximum Junction-to-Ambientƒ
Max.
-40
-3.4
-2.7
-27
2.0
1.3
16
± 20
-55 to + 150
Max.
62.5
Units
V
A
W
mW/°C
V
°C
Units
°C/W
www.irf.com
1
04/20/10

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