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PDF K2572 Data sheet ( Hoja de datos )
| Número de pieza | K2572 | |
| Descripción | Silicon N-Channel Power F-MOS | |
| Fabricantes | Panasonic Semiconductor | |
| Logotipo |  |
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Power F-MOS FETs
2SK2572(Tentative)
Silicon N-Channel Power F-MOS
s Features
q Avalanche energy capability guaranteed
q High-speed switching
q Low ON-resistance
q No secondary breakdown
s Applications
q Non-contact relay
q Solenoid drive
q Motor drive
q Control equipment
q Switching mode regulator
s Absolute Maximum Ratings (Tc = 25˚C)
Parameter
Drain-Source breakdown voltage
Gate-Source voltage
Drain current
DC
Pulse
Avalanche energy capability
Allowable power
dissipation
TC= 25˚C
Ta= 25˚C
Channel temperature
Storage temperature
* L= 0.1mH, IL=15A, 1 pulse
Symbol
VDSS
VGSS
ID
IDP
EAS *
PD
Tch
Tstg
Rating
500
±20
±15
±30
11.25
100
3
150
–55 to +150
Unit
V
V
A
A
mJ
W
˚C
˚C
s Electrical Characteristics (Tc = 25˚C)
Parameter
Drain-Source cut-off current
Gate-Source leakage current
Drain-Source breakdown voltage
Gate threshold voltage
Drain-Source ON-resistance
Forward transadmittance
Diode forward voltage
Input capacitance
Output capacitance
Feedback capacitance
Turn-on time
Fall time
Turn-off time (delay time)
Channel-Case heat resistance
Channel-Atmosphere heat resistance
Symbol
IDSS
IGSS
VDSS
Vth
RDS(on)
| Yfs |
VDSF
Ciss
Coss
Crss
ton
tf
td(off)
Rth(ch-c)
Rth(ch-a)
Condition
VDS= 400V, VGS= 0
VGS=±30V, VDS= 0
ID=1mA, VGS= 0
VDS= 25V, ID=1mA
VGS=10V, ID= 8A
VDS= 25V, ID= 8A
IDR=15A, VGS= 0
VDS= 20V, VGS= 0, f=1MHz
VDD.=.150V, ID= 8A
VGS=10V, RL=19Ω
2SK2572
Unit : mm
15.5±0.5
ø3.2±0.1
3.0±0.3
5˚ 5˚
4.0
2.0±0.2
1.1±0.1
5.45±0.3
5˚
5˚
5˚
5˚
5.45±0.3
0.7±0.1
123
1 : Gate
2 : Drain
3 : Source
TOP-3E Package
Min Typ Max Unit
100 µ A
±1 µ A
500 V
1 5V
0.38 0.5
Ω
58
S
–1.8 V
1500
pF
300 pF
145 pF
110 ns
100 ns
330 ns
1.25 ˚C/W
41.67 ˚C/W
1 page | ||
| Páginas | Total 2 Páginas | |
| PDF Descargar | [ Datasheet K2572.PDF ] | |
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