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PDF FDW2510NZ Data sheet ( Hoja de datos )
| Número de pieza | FDW2510NZ | |
| Descripción | Dual N-Channel 2.5V Specified PowerTrench MOSFET | |
| Fabricantes | Fairchild Semiconductor | |
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April 2004
FDW2510NZ
Dual N-Channel 2.5V Specified PowerTrench® MOSFET
General Description
This N-Channel 2.5V specified MOSFET is a rugged
gate version of Fairchild’s Semiconductor’s advanced
PowerTrench process. It has been optimized for power
management applications with a wide range of gate
drive voltage (2.5V – 12V).
Applications
• Li-Ion Battery Pack
Features
• 6.4 A, 20 V
RDS(ON) = 24 mΩ @ VGS = 4.5 V
RDS(ON) = 32 mΩ @ VGS = 2.5 V
• Extended VGSS range (±12V) for battery applications
• ESD protection diode (note 3)
• High performance trench technology for extremely
low RDS(ON)
• Low profile TSSOP-8 package
G2
S2
S2
D2
TSSOP-8
G1
S1
S1
D1
Pin 1
Absolute Maximum Ratings TA=25oC unless otherwise noted
Symbol
Parameter
VDSS
VGSS
ID
Drain-Source Voltage
Gate-Source Voltage
Drain Current – Continuous
– Pulsed
(Note 1a)
PD
Power Dissipation for Single Operation
(Note 1a)
(Note 1b)
TJ, TSTG
Operating and Storage Junction Temperature Range
Thermal Characteristics
RθJA Thermal Resistance, Junction-to-Ambient
RθJA Thermal Resistance, Junction-to-Ambient
(Note 1a)
(Note 1b)
Package Marking and Ordering Information
Device Marking
Device
Reel Size
2510NZ
FDW2510NZ
13’’
Ratings
20
±12
6.4
30
1.6
1.1
–55 to +150
77
114
Tape width
12mm
Units
V
V
A
W
°C
°C/W
°C/W
Quantity
3000 units
©2004 Fairchild Semiconductor Corporation
FDW2510NZ Rev C(W)
1 page  
Typical Characteristics
5
ID = 6.4A
VDS = 5V
4
3
10V
15V
2
1
0
0 2 4 6 8 10
Qg, GATE CHARGE (nC)
Figure 7. Gate Charge Characteristics.
100
RDS(ON) LIMIT
10
1
100us
1ms
10ms
100ms
1s
10s
DC
VGS = 4.5V
0.1 SINGLE PULSE
RθJA = 114oC/W
TA = 25oC
0.01
0.1
1 10
VDS, DRAIN-SOURCE VOLTAGE (V)
100
Figure 9. Maximum Safe Operating Area.
1200
1000
800
f = 1MHz
VGS = 0 V
Ciss
600
400
200
0
0
Coss
Crss
4 8 12 16
VDS, DRAIN TO SOURCE VOLTAGE (V)
20
Figure 8. Capacitance Characteristics.
50
SINGLE PULSE
40 RθJA = 114°C/W
TA = 25°C
30
20
10
0
0.001
0.01
0.1 1
10
t1, TIME (sec)
100
Figure 10. Single Pulse Maximum
Power Dissipation.
1000
1
0.1
0.01
D = 0.5
0.2
0.1
0.05
0.02
0.01
SINGLE PULSE
RθJA(t) = r(t) * RθJA
RθJA =114 °C/W
P(pk)
t1
t2
TJ - TA = P * RθJA(t)
Duty Cycle, D = t1 / t2
0.001
0.0001
0.001
0.01
0.1 1
t1, TIME (sec)
10 100 1000
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1b.
Transient thermal response will change depending on the circuit board design.
FDW2510NZ Rev C(W)
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet FDW2510NZ.PDF ] | |
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