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Numéro de référence | FDS6676S | ||
Description | 30V N-Channel PowerTrench SyncFET | ||
Fabricant | Fairchild Semiconductor | ||
Logo | |||
1 Page
July 2002
FDS6676S
30V N-Channel PowerTrench® SyncFET™
General Description
The FDS6676S is designed to replace a single SO-8
MOSFET and Schottky diode in synchronous DC:DC
power supplies. This 30V MOSFET is designed to
maximize power conversion efficiency, providing a low
RDS(ON) and low gate charge. The FDS6676S includes
an integrated Schottky diode using Fairchild’s
monolithic SyncFET technology.
Applications
• DC/DC converter
• Motor drives
Features
• 14.5 A, 30 V.
RDS(ON) typ 5.25 mΩ @ VGS = 10 V
RDS(ON) typ 6.00 mΩ @ VGS = 4.5 V
• Includes SyncFET Schottky body diode
• Low gate charge (43nC typical)
• High performance trench technology for extremely low
RDS(ON) and fast switching
• High power and current handling capability
D
D
D
D
SO-8
G
SS
S
Absolute Maximum Ratings TA=25oC unless otherwise noted
Symbol
VDSS
VGSS
ID
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current – Continuous
– Pulsed
(Note 1a)
PD
Power Dissipation for Single Operation
(Note 1a)
(Note 1b)
(Note 1c)
TJ, TSTG
Operating and Storage Junction Temperature Range
Thermal Characteristics
RθJA Thermal Resistance, Junction-to-Ambient
RθJC Thermal Resistance, Junction-to-Case
(Note 1a)
(Note 1)
Package Marking and Ordering Information
Device Marking
Device
Reel Size
FDS6676S
FDS6676S
13’’
5
6
7
8
Ratings
30
±16
14.5
50
2.5
1.2
1
–55 to +150
50
25
Tape width
12mm
4
3
2
1
Units
V
V
A
W
°C
°C/W
Quantity
2500 units
©2002 Fairchild Semiconductor Corporation
FDS6676S Rev E1 (W)
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Pages | Pages 6 | ||
Télécharger | [ FDS6676S ] |
No | Description détaillée | Fabricant |
FDS6676 | 30V N-Channel PowerTrench MOSFET | Fairchild Semiconductor |
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