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PDF CEM4410B Data sheet ( Hoja de datos )
| Número de pieza | CEM4410B | |
| Descripción | N-Channel Enhancement Mode Field Effect Transistor | |
| Fabricantes | Chino-Excel Technology | |
| Logotipo |  |
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CEM4410B
Dec. 2002
N-Channel Enhancement Mode Field Effect Transistor
5 FEATURES
30V , 12.5A , RDS(ON)=9.5mΩ @VGS=10V.
RDS(ON)=14mΩ @VGS=4.5V.
Super high dense cell design for extremely low RDS(ON).
High power and current handing capability.
Surface mount Package.
DDDD
8 7 65
SO-8
1
1 234
S SS G
ABSOLUTE MAXIMUM RATINGS (TA=25 C unless otherwise noted)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current-Continuous a
-Pulsed
Drain-Source Diode Forward Current a
Maximum Power Dissipationa
Operating Junction and Storage
Temperature Range
Symbol
VDS
VGS
ID
IDM
IS
PD
TJ, TSTG
Limit
30
Ć20
Ć12.5
Ć50
2.3
2.5
-55 to 150
Unit
V
V
A
A
A
W
C
THERMAL CHARACTERISTICS
a
Thermal Resistance, Junction-to-Ambient
RįJA
50
C/W
5-2
1 page  
CEM4410B
VDD
ton toff
5 RL
VIN
td(on)
tr td(off)
90%
tf
90%
D VOUT
VGS
VOUT
10% INVERTED
10%
RGEN G
90%
S
VIN 50%
50%
10%
PULSE WIDTH
Figure 11. Switching Test Circuit
Figure 12. Switching Waveforms
10 0
D=0.5
0.2
10-1 0.1
0.05
0.02
10-2 0.01
Single Pulse
10-3
10-4
10-3
10-2
10-1
10 0
Square Wave Pulse Duration (sec)
PDM
t1
t2
1. RįJA (t)=r (t) * RįJA
2. RįJA=See Datasheet
3. TJM-TA = P* RįJA (t)
4. Duty Cycle, D=t1/t2
1
10
Figure 13. Normalized Thermal Transient Impedance Curve
10 2
5-6
5 Page | ||
| Páginas | Total 5 Páginas | |
| PDF Descargar | [ Datasheet CEM4410B.PDF ] | |
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