DataSheetWiki


CEM4531 fiches techniques PDF

Chino-Excel Technology - P-Channel Enhancement Mode Field Effect Transistor

Numéro de référence CEM4531
Description P-Channel Enhancement Mode Field Effect Transistor
Fabricant Chino-Excel Technology 
Logo Chino-Excel Technology 





1 Page

No Preview Available !





CEM4531 fiche technique
CEM4531
P-Channel Enhancement Mode Field Effect Transistor
FEATURES
-30V, -6.5A, RDS(ON) = 35m@VGS = -10V.
RDS(ON) = 55m@VGS = -4.5V.
Super high dense cell design for extremely low RDS(ON).
High power and current handing capability.
Lead free product is acquired.
Surface mount Package.
DD D D
8 7 65
5
SO-8
1
1 234
S SSG
ABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise noted
Parameter
Symbol
Limit
Drain-Source Voltage
Gate-Source Voltage
Drain Current-Continuous
Drain Current-Pulsed a
VDS -30
VGS ±20
ID -6.5
IDM -26
Maximum Power Dissipation
PD 2.5
Operating and Store Temperature Range
TJ,Tstg
-55 to 150
Thermal Characteristics
Parameter
Thermal Resistance, Junction-to-Ambient b
Symbol
RθJA
Limit
50
Units
V
V
A
A
W
C
Units
C/W
2005.March
5 - 67
http://www.cetsemi.com

PagesPages 4
Télécharger [ CEM4531 ]


Fiche technique recommandé

No Description détaillée Fabricant
CEM4531 P-Channel Enhancement Mode Field Effect Transistor Chino-Excel Technology
Chino-Excel Technology
CEM4532 Dual Enhancement Mode Field Effect Transistor Chino-Excel Technology
Chino-Excel Technology
CEM4539 Dual Enhancement Mode Field Effect Transistor(N and P Channel) Chino-Excel Technology
Chino-Excel Technology

US18650VTC5A

Lithium-Ion Battery

Sony
Sony
TSPC106

PCI Bus Bridge Memory Controller

ATMEL
ATMEL
TP9380

NPN SILICON RF POWER TRANSISTOR

Advanced Semiconductor
Advanced Semiconductor


www.DataSheetWiki.com    |   2020   |   Contactez-nous  |   Recherche