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Numéro de référence | CEM8938 | ||
Description | Dual Enhancement Mode Field Effect Transistor | ||
Fabricant | Chino-Excel Technology | ||
Logo | |||
CEM8938
Dual Enhancement Mode Field Effect Transistor (N and P Channel)
FEATURES
30V, 7A, RDS(ON) = 26mΩ @VGS = 10V.
RDS(ON) = 38mΩ @VGS = 4.5V.
-30V, -6A, RDS(ON) = 38mΩ @VGS = -10V.
RDS(ON) = 57mΩ @VGS = -4.5V.
Super high dense cell design for extremely low RDS(ON).
High power and current handing capability.
Lead free product is acquired.
Surface mount Package.
SO-8
1
D1 D1 D2 D2
87 65
1234
S1 G1 S2 G2
ABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise noted
Parameter
Symbol
N-Channel
Drain-Source Voltage
Gate-Source Voltage
Drain Current-Continuous
Drain Current-Pulsed a
VDS 30
VGS ±20
ID 7
IDM 20
P-Channel
-30
±20
-6
-20
Maximum Power Dissipation
PD 2.0
Operating and Store Temperature Range
TJ,Tstg
-55 to 150
Units
V
V
A
A
W
C
Thermal Characteristics
Parameter
Thermal Resistance, Junction-to-Ambient b
Symbol
RθJA
Limit
62.5
Units
C/W
2005.March
5 - 186
http://www.cetsemi.com
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Pages | Pages 7 | ||
Télécharger | [ CEM8938 ] |
No | Description détaillée | Fabricant |
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CEM8938 | Dual Enhancement Mode Field Effect Transistor | Chino-Excel Technology |
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