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PDF HCTS541HMSR Data sheet ( Hoja de datos )

Número de pieza HCTS541HMSR
Descripción Radiation Hardened Non-Inverting Octal Buffer/Line Driver/ Three-State
Fabricantes Intersil Corporation 
Logotipo Intersil Corporation Logotipo



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HCTS541MS
August 1995
Radiation Hardened Non-Inverting
Octal Buffer/Line Driver, Three-State
Features
Pinouts
• 3 Micron Radiation Hardened CMOS SOS
• Total Dose 200K RAD (Si)
• SEP Effective LET No Upsets: >100 MEV-cm2/mg
• Single Event Upset (SEU) Immunity < 2 x 10-9 Errors/
Bit-Day (Typ)
• Dose Rate Survivability: >1 x 1012 RAD (Si)/s
• Dose Rate Upset >1010 RAD (Si)/s 20ns Pulse
• Latch-Up Free Under Any Conditions
• Fanout (Over Temperature Range)
- Bus Driver Outputs - 15 LSTTL Loads
• Military Temperature Range: -55oC to +125oC
• Significant Power Reduction Compared to LSTTL ICs
• DC Operating Voltage Range: 4.5V to 5.5V
• LSTTL Input Compatibility
- VIL = 0.8V Max
- VIH = VCC/2 Min
• Input Current Levels Ii 5µA at VOL, VOH
20 LEAD CERAMIC DUAL-IN-LINE
METAL SEAL PACKAGE (SBDIP)
MIL-STD-1835 CDIP2-T20
TOP VIEW
OE1 1
A0 2
A1 3
A2 4
A3 5
A4 6
A5 7
A6 8
A7 9
GND 10
20 VCC
19 OE2
18 Y0
17 Y1
16 Y2
15 Y3
14 Y4
13 Y5
12 Y6
11 Y7
20 LEAD CERAMIC METAL SEAL
FLATPACK PACKAGE (FLATPACK)
MIL-STD-1835 CDFP4-F20
TOP VIEW
Description
The Intersil HCTS541MS is a Radiation Hardened non-
inverting octal buffer/line driver, three-state outputs. The
output enable pins (OEN1 and OEN2) control the three-state
outputs. If either enable is high the outputs will be in the high
impedance state. For data output both enables (OEN1 and
OEN2) must be low.
The HCTS541MS utilizes advanced CMOS/SOS technology
to achieve high-speed operation. This device is a member of
radiation hardened, high-speed, CMOS/SOS Logic Family.
The HCTS54 is supplied in a 20 lead Ceramic flatpack
(K suffix) or a SBDIP Package (D suffix).
OE1
A0
A1
A2
A3
A4
A5
A6
A7
GND
1 20
2 19
3 18
4 17
5 16
6 15
7 14
8 13
9 12
10 11
VCC
OE2
Y0
Y1
Y2
Y3
Y4
Y5
Y6
Y7
Ordering Information
PART NUMBER
HCTS541DMSR
HCTS541KMSR
HCTS541D/Sample
HCTS541K/Sample
HCTS541HMSR
TEMPERATURE RANGE
-55oC to +125oC
-55oC to +125oC
+25oC
+25oC
+25oC
SCREENING LEVEL
Intersil Class S Equivalent
Intersil Class S Equivalent
Sample
Sample
Die
PACKAGE
20 Lead SBDIP
20 Lead Ceramic Flatpack
20 Lead SBDIP
20 Lead Ceramic Flatpack
Die
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
1-888-INTERSIL or 321-724-7143 | Copyright © Intersil Corporation 1999
682
Spec Number 518630
File Number 3073.1

1 page




HCTS541HMSR pdf
Specifications HCTS541MS
TABLE 4. DC POST RADIATION ELECTRICAL PERFORMANCE CHARACTERISTICS
PARAMETER
Quiescent Current
Output Current (Sink)
Output Current
(Source)
Output Voltage Low
Output Voltage High
Input Leakage Current
Three-State Output
Leakage Current
Noise Immunity
Functional Test
Data to Output
Enable to Output
Disable to Output
SYMBOL
(NOTES 1, 2)
CONDITIONS
ICC VCC = 5.5V, VIN = VCC or GND
IOL VCC = 4.5V, VIN = VCC or GND,
VOUT = 0.4V
IOH VCC = 4.5V, VIN = VCC or GND,
VOUT = VCC -0.4V
VOL VCC = 4.5V or 5.5V, VIH = VCC/2,
VIL = 0.8V, IOL = 50µA
VOH
VCC = 4.5V or 5.5V, VIH = VCC/2,
VIL = 0.8V, IOH = -50µA
IIN VCC = 5.5V, VIN = VCC or GND
IOZ Applied Voltage = 0V or VCC, VCC = 5.5V
FN
TPHL,
TPLH
TPZL
TPZH
TPLZ
TPHZ
VCC = 4.5V, VIH = 2.25V,
VIL = 0.8V, (Note 3)
VCC = 4.5V
VCC = 4.5V
VCC = 4.5V
VCC = 4.5V
VCC = 4.5V
TEMPERATURE
+25oC
+25oC
200K RAD
LIMITS
MIN MAX UNITS
- 0.75 mA
6.0 - mA
+25oC
-6.0 - mA
+25oC
- 0.1 V
+25oC
+25oC
+25oC
VCC
-0.1
-
-
-
±5
±50
V
µA
µA
+25oC
---
+25oC
2 22 ns
+25oC
+25oC
+25oC
+25oC
2 26 ns
2 21 ns
2 23 ns
2 22 ns
NOTES:
1. All voltages referenced to device GND.
2. AC measurements assume RL = 500, CL = 50pF, Input TR = TF = 3ns, VIL = GND, VIH = 3V.
3. For functional tests VO 4.0V is recognized as a logic “1”, and VO 0.5V is recognized as a logic “0”.
TABLE 5. BURN-IN AND OPERATING LIFE TEST, DELTA PARAMETERS (+25oC)
PARAMETER
GROUP B
SUBGROUP
DELTA LIMIT
ICC 5 12µA
IOL/IOH
5 -15% of 0 Hour
IOZL/IOZH
5 ±200nA
Spec Number 518630
686

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