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PDF NVD5807N Data sheet ( Hoja de datos )
| Número de pieza | NVD5807N | |
| Descripción | Power MOSFET ( Transistor ) | |
| Fabricantes | ON Semiconductor | |
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NTD5807N, NVD5807N
Power MOSFET
40 V, 23 A, Single N−Channel, DPAK/IPAK
Features
• Low RDS(on)
• High Current Capability
• Avalanche Energy Specified
• AEC−Q101 Qualified and PPAP Capable − NVD5807N
• These Devices are Pb−Free and are RoHS Compliant
Applications
• CCFL Backlight
• DC Motor Control
• Class D Amplifier
• Power Supply Secondary Side Synchronous Rectification
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Parameter
Symbol Value
Unit
Drain−to−Source Voltage
Gate−to−Source Voltage − Continuous
Gate−to−Source Voltage
− Non−Repetitive (tp < 10 mS)
Continuous Drain
Current (RqJC)
(Note 1)
Power Dissipation
(RqJC) (Note 1)
Steady
State
TC = 25°C
TC = 100°C
TC = 25°C
Pulsed Drain Current
tp = 10 ms
Operating Junction and Storage Temperature
VDSS
VGS
VGS
ID
PD
IDM
TJ, Tstg
40
"20
"30
23
16
33
45
−55 to
175
V
V
V
A
W
A
°C
Source Current (Body Diode)
IS 23 A
Single Pulse Drain−to−Source Avalanche
EAS 29.4 mJ
Energy (VDD = 50 V, VGS = 10 V, RG = 25 W,
IL(pk) = 14 A, L = 0.3 mH, VDS = 40 V)
Lead Temperature for Soldering Purposes
(1/8″ from case for 10 s)
TL 260 °C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
THERMAL RESISTANCE MAXIMUM RATINGS
Parameter
Symbol Value Unit
Junction−to−Case (Drain)
RqJC
4.5 °C/W
Junction−to−Ambient − Steady State (Note 1) RqJA
107
1. Surface−mounted on FR4 board using the minimum recommended pad size.
http://onsemi.com
V(BR)DSS
40 V
RDS(on) MAX
37 mW @ 4.5 V
31 mW @ 10 V
D
ID MAX
16 A
23 A
G
S
N−CHANNEL MOSFET
44
12
3
DPAK
CASE 369AA
(Surface Mount)
STYLE 2
1
2
IPAK
3 CASE 369D
(Straight Lead
DPAK)
MARKING DIAGRAMS
& PIN ASSIGNMENT
4
Drain
4
Drain
2
1 Drain 3
Gate Source
1 23
Gate Drain Source
A = Assembly Location*
Y = Year
WW = Work Week
5807N = Device Code
G = Pb−Free Package
* The Assembly Location code (A) is front side
optional. In cases where the Assembly Location is
stamped in the package, the front side assembly
code may be blank.
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 5 of this data sheet.
© Semiconductor Components Industries, LLC, 2014
June, 2014 − Rev. 5
1
Publication Order Number:
NTD5807N/D
1 page  
NTD5807N, NVD5807N
TYPICAL PERFORMANCE CHARACTERISTICS
10
D = 0.5
0.2
1
0.1
0.05
0.1
0.00001
0.02
0.01
Single Pulse
0.0001
0.001
0.01
t, PULSE TIME (s)
Figure 12. Thermal Response
0.1
1
ORDERING INFORMATION
Order Number
Package
Shipping†
NTD5807NG
IPAK (Straight Lead DPAK)
(Pb−Free)
75 Units / Rail
NTD5807NT4G
DPAK
(Pb−Free)
2500 / Tape & Reel
NVD5807NT4G
DPAK
(Pb−Free)
2500 / Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
http://onsemi.com
5
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| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet NVD5807N.PDF ] | |
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