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PDF CLF1G0035-100 Data sheet ( Hoja de datos )
| Número de pieza | CLF1G0035-100 | |
| Descripción | Broadband RF power GaN HEMT | |
| Fabricantes | NXP Semiconductors | |
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CLF1G0035-100;
CLF1G0035S-100
Broadband RF power GaN HEMT
Rev. 2 — 29 January 2013
Objective data sheet
1. Product profile
1.1 General description
CLF1G0035-100 and CLF1G0035S-100 are broadband general purpose 100 W
amplifiers with first generation GaN HEMT technology from NXP. Frequency of operation
is from DC to 3.5 GHz.
Table 1. CW and pulsed RF application information
Typical RF performance at Tcase = 25 C; IDq = 300 mA; VDS = 50 V in a class-AB broadband demo
board.
Test signal
f
(MHz)
PL Gp
(W) (dB)
D
(%)
1-Tone CW
500
100 14.2
61.6
1000
100 11.2
47.9
1500
100 10.8
46.4
2000
100 11.7
53.3
1-Tone pulsed [1]
500
100 15.5
67.4
1000
100 14
52.9
1500
100 14.3
53.7
2000
100 13.9
59.5
[1] Pulsed RF; tp = 50 s; = 1 %.
Table 2. 2-Tone CW application information
Typical 2-Tone performance at Tcase = 25 C; IDq = 500 mA; VDS = 50 V in a class-AB broadband
demo board.
Test signal
f
PL(PEP)
IMD3
(MHz)
(W)
(dBc)
2-Tone CW [1]
300 20
45.5
1000
20
39.3
1500
20
44
2000
20
46.4
[1] 2-Tone CW; f = 1 MHz.
1.2 Features and benefits
Frequency of operation is from DC to 3.5 GHz
100 W general purpose broadband RF Power GaN HEMT
1 page  
NXP Semiconductors
CLF1G0035-100; CLF1G0035S-100
Broadband RF power GaN HEMT
Table 9. List of components …continued
See Figure 1 and Figure 2.
Component
Description
C22, C26
multilayer ceramic chip capacitor
C23 multilayer ceramic chip capacitor
C25 multilayer ceramic chip capacitor
C27 electrolytic capacitor
E1, E2
drain voltage connection
J1, P1, P2, P3, P4 1 row, 4-way vertical DC connector header
J2 RF in connector
J3 RF out connector
L2 inductor
Value
10 nF
10 F
1 F
470 F
-
-
-
-
14 nH
L3 ferrite bead
Q1 transistor
Q2 transistor
Q3 transistor
R1 resistor
R2 resistor
R3 resistor
R4 resistor
R21, R22
resistor
T1 semi-rigid coax
T2 semi-rigid coax
Z1, Z2, Z3, Z4, Z5, microstrip lines
Z6, Z7, Z8
-
-
-
-
20.0
10.0 k
200
0.005
0
18 mm
16 mm
-
Remarks
generic
TDK C5750X7S2A106M
generic
Panasonic EEE-TK1J471AM
3 turns, 18 AWG,
inner diameter = 2.5 mm
Fair-Rite 2743019447
NXP CLF1G0035-100
NXP BC857B
NXP PSMN8R2-80YS
generic
generic
ATC LR12010T0200J
Susumu RL7520WT-R005-F
generic
Micro-coax UT-062C-18
Micro-coax UT-062C-18
CLF1G0035-100_1G0035S-100
Objective data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 2 — 29 January 2013
© NXP B.V. 2013. All rights reserved.
5 of 20
5 Page 
NXP Semiconductors
CLF1G0035-100; CLF1G0035S-100
Broadband RF power GaN HEMT
,0'
G%F
DDD
I 0+]
VDS = 50 V; IDq = 500 mA; PL(PEP) = 20 W.
(1) f = 10 kHz
(2) f = 30 kHz
(3) f = 100 kHz
(4) f = 300 kHz
(5) f = 1 MHz
(6) f = 3 MHz
Fig 9. Third-order intermodulation distortion as a function of frequency and tone
spacing; typical values
7.4 Bias module
The bias module information for the GaN HEMT amplifier is described in application note
“AN11130”
8. Test information
8.1 Ruggedness in class-AB operation
The CLF1G0035-100 and CLF1G0035S-100 are capable of withstanding a load mismatch
corresponding to VSWR = 10 : 1 through all phases under the following conditions:
VDS = 50 V; PL = 100 W, f = 3000 MHz.
8.2 Load pull impedance information
The measured load pull impedances are shown below. Impedance reference plane
defined at device leads. Measurements performed with NXP test fixtures. Test
temperature set at 25 C with a pulsed CW signal; tp = 100 s; = 10 %; RF performance
at VDS = 50 V; IDq = 330 mA.
CLF1G0035-100_1G0035S-100
Objective data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 2 — 29 January 2013
© NXP B.V. 2013. All rights reserved.
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