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TGS2355 fiches techniques PDF

TriQuint Semiconductor - 0.5-6GHz High Power GaN Switch

Numéro de référence TGS2355
Description 0.5-6GHz High Power GaN Switch
Fabricant TriQuint Semiconductor 
Logo TriQuint Semiconductor 





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TGS2355 fiche technique
Applications
High Power Switching
TGS2355
0.5-6 GHz High Power GaN Switch
Product Features
Frequency Range: 0.5 - 6 GHz
Insertion Loss: < 1.3 dB
Power Handling: 100 W
Isolation: 40 dB typical
Control Voltages: 0 V/-40 V from either side of
the MMIC
Reflective Switch
Chip Dimensions: 2.14 x 2.50 x 0.1 mm
Functional Block Diagram
General Description
The TGS2355 is a single-pole, double-throw (SPDT)
reflective switch fabricated on TriQuint’s 0.25um GaN
on SiC production process. Operating from 0.5 to 6
GHz, the TGS2355 provides up to 100 W input power
handling with < 1 dB insertion over most of the
operating band and greater than 40 dB isolation.
The TGS2355 is available in a small 2.14 x 2.50 mm
die size and requires very little control current allowing
for easy system integration without impacting system
power budgets.
The TGS2355 is ideally suited for high power switching
applications across both defense and commercial
applications.
Lead-free and RoHS compliant.
Evaluation boards available on request.
Pin Configuration
Pin No.
1
2, 7
3, 6
4
5
Label
RFC
VC1
VC2
RF1
RF2
Ordering Information
Part No.
TGS2355
ECCN
EAR99
Description
0.5-6 GHz High Power
GaN Switch
Datasheet: Rev - 06-20-14
© 2014 TriQuint
- 1 of 12 -
Disclaimer: Subject to change without notice
www.triquint.com

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