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TK10X40D fiches techniques PDF

Toshiba Semiconductor - MOSFETs

Numéro de référence TK10X40D
Description MOSFETs
Fabricant Toshiba Semiconductor 
Logo Toshiba Semiconductor 





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TK10X40D fiche technique
MOSFETs Silicon N-Channel MOS (π-MOS)
TK10X40D
1. Applications
• Switching Voltage Regulators
2. Features
(1) Low drain-source on-resistance: RDS(ON) = 0.46 (typ.)
(2) High forward transfer admittance: |Yfs| = 5.0 S (typ.)
(3) Low leakage current: IDSS = 10 µA (max) (VDS = 400 V)
(4) Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA)
3. Packaging and Internal Circuit
TK10X40D
1: Gate (G)
2: N.C.
3: Source (S)
4: Drain (D) (Heatsink)
TFP
4. Absolute Maximum Ratings (Note) (Ta = 25unless otherwise specified)
Characteristics
Symbol
Rating
Unit
Drain-source voltage
VDSS 400 V
Gate-source voltage
VGSS
±30
Drain current (DC)
(Note 1)
ID
10 A
Drain current (pulsed)
(Note 1)
IDP
40
Power dissipation
(Tc = 25)
PD 125 W
Single-pulse avalanche energy
(Note 2)
EAS
337 mJ
Avalanche current
IAR 10 A
Repetitive avalanche energy
(Note 3)
EAR
12.5 mJ
Channel temperature
Tch 150
Storage temperature
Tstg -55 to 150
Note:
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
1 2011-05-27
Rev.1.0

PagesPages 9
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