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Numéro de référence | NCE3050K | ||
Description | N-Channel Enhancement Mode Power MOSFET | ||
Fabricant | NCEPOWER | ||
Logo | |||
1 Page
http://www.ncepower.com
Pb Free Product
NCE3050K
NCE N-Channel Enhancement Mode Power MOSFET
DESCRIPTION
The NCE3050K uses advanced trench technology and
design to provide excellent RDS(ON) with low gate charge. It
can be used in a wide variety of applications.
GENERAL FEATURES
● VDS =30V,ID =50A
RDS(ON) < 9mΩ @ VGS=10V
RDS(ON) < 15mΩ @ VGS=5V
● High density cell design for ultra low Rdson
● Fully characterized Avalanche voltage and current
● Good stability and uniformity with high EAS
● Excellent package for good heat dissipation
● Special process technology for high ESD capability
Schematic diagram
Application
● Power switching application
● Hard Switched and High Frequency Circuits
● Uninterruptible Power Supply
Marking and pin Assignment
100% UIS TESTED!
TO-252 top view
Package Marking And Ordering Information
Device Marking
Device
Device Package
NCE3050K
NCE3050K
TO-252
Reel Size
-
Tape width
-
Quantity
-
Absolute Maximum Ratings (TA=25℃unless otherwise noted)
Drain-Source Voltage
Gate-Source Voltage
Parameter
Symbol
VDS
VGS
Drain Current-Continuous
ID
Drain Current-Continuous(TC=100℃)
Pulsed Drain Current
Maximum Power Dissipation
Derating factor
ID (100℃)
IDM
PD
Single pulse avalanche energy (Note 5)
Operating Junction and Storage Temperature Range
EAS
TJ,TSTG
Limit
30
±20
50
35
140
60
0.4
70
-55 To 175
Unit
V
V
A
A
A
W
W/℃
mJ
℃
Wuxi NCE Power Semiconductor Co., Ltd
Page 1
v1.0
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Pages | Pages 7 | ||
Télécharger | [ NCE3050K ] |
No | Description détaillée | Fabricant |
NCE3050 | NCE N-Channel Enhancement Mode Power MOSFET | NCE Power Semiconductor |
NCE3050I | NCE N-Channel Enhancement Mode Power MOSFET | NCE Power Semiconductor |
NCE3050K | N-Channel Enhancement Mode Power MOSFET | NCEPOWER |
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