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PDF GT80J101B Data sheet ( Hoja de datos )
| Número de pieza | GT80J101B | |
| Descripción | Insulated Gate Bipolar Transistor | |
| Fabricantes | Toshiba Semiconductor | |
| Logotipo |  |
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GT80J101B
TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT
GT80J101B
High Power Switching Applications
• Enhancement mode type
• High speed: tf = 0.40 µs (max) (IC = 80 A)
• Low saturation voltage: VCE (sat) = 2.9 V (max) (IC = 80 A)
Maximum Ratings (Ta = 25°C)
Characteristics
Collector-emitter voltage
Gate-emitter voltage
Continuous collector
current
@Tc = 100°C
@Tc = 25°C
Pulsed collector current (Note 1)
Collector power
dissipation
@Tc = 100°C
@Tc = 25°C
@Ta = 25°C
Junction temperature
Storage temperature
Screw torque
Symbol
VCES
VGES
IC
ICP
PC
Tj
Tstg
Rating
600
±20
33
80
160
80
200
3.5
150
−55~150
0.8
Unit
V
V
A
A
W
°C
°C
N·m
Note 1: The Maximum rating of ICP=160A is limited by pulse (1ms).
Refer to the graph of safe operating area for the detail.
Unit: mm
JEDEC
?
JEITA
?
TOSHIBA
2-21F2C
Weight: 9.75 g (typ.)
Thermal Characteristics
Characteristics
Symbol
Thermal resistance , junction to case
(Tc = 25°C)
Thermal resistance , junction to air
(Ta = 25°C)
Rth (j-c)
Rth (j-a)
Rating
0.625
35.7
Unit
°C/W
°C/W
MARKING
TOSHIBA
80J101B
JAPAN
Part No. (or abbreviation code)
Lot No.
A line indicates
lead (Pb)-free package or
lead (Pb)-free finish.
1
2006-06-05
1 page  
Reverse Bias SOA
300
100
30
10
3
1
Tj <= 125°C
0.3 VGE = +15 V
−0
RG = 33 Ω
0.1
0 100 200 300 400 500 600
Collector-emitter voltage VCE (V)
700
GT80J101B
5 2006-06-05
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet GT80J101B.PDF ] | |
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