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Toshiba Semiconductor - Insulated Gate Bipolar Transistor

Numéro de référence GT5G102
Description Insulated Gate Bipolar Transistor
Fabricant Toshiba Semiconductor 
Logo Toshiba Semiconductor 





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GT5G102 fiche technique
Preliminary
TOSHIBA Insulated Gate Bipolar Transistor
Silicon N Channel IGBT
GT5G102
Strobe Flash Applications
GT5G102
Unit: mm
· 3rd Generation
· High input impedance
· Low saturation voltage
: VCE (sat) = 8 V (max) (IC = 130 A)
· Enhancement-mode
· 12 V gate drive
Maximum Ratings (Ta = 25°C)
Characteristics
Collector-emitter voltage
Gate-emitter voltage
Collector current
DC
1 ms
Collector power
dissipation
Ta = 25°C
Tc = 25°C
Junction temperature
Storage temperature range
Symbol
VCES
VGES
IC
ICP
PC
PC
Tj
Tstg
Equivalent Circuit
Collector
Gate
Rating
400
±20
5
130
1.3
20
150
-55~150
Unit
V
V
A
A
W
W
°C
°C
Emitter
JEDEC
JEITA
TOSHIBA (A) 2-7B5C (B) 2-7B6C
Weight: 0.036 g
1 2003-03-18

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