|
|
PDF GT10Q301 Data sheet ( Hoja de datos )
| Número de pieza | GT10Q301 | |
| Descripción | Insulated Gate Bipolar Transistor | |
| Fabricantes | Toshiba Semiconductor | |
| Logotipo |  |
|
Hay una vista previa y un enlace de descarga de GT10Q301 (archivo pdf) en la parte inferior de esta página. Total 7 Páginas | ||
|
No Preview Available !
GT10Q301
TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT
GT10Q301
High Power Switching Applications
Motor Control Applications
Unit: mm
· The 3rd generation
· Enhancement-mode
· High speed: tf = 0.32 µs (max)
· Low saturation voltage: VCE (sat) = 2.7 V (max)
· FRD included between emitter and collector
Maximum Ratings (Ta = 25°C)
Characteristics
Collector-emitter voltage
Gate-emitter voltage
Collector current
DC
1 ms
Emitter-collector
forward current
DC
1 ms
Collector power dissipation
(Tc = 25°C)
Junction temperature
Storage temperature range
Symbol
VCES
VGES
IC
ICP
IF
IFM
PC
Tj
Tstg
Rating
1200
±20
10
20
10
20
140
150
−55 to 150
Equivalent Circuit
Unit
V
V
A
A
W
°C
°C
Collector
Gate
Emitter
JEDEC
―
JEITA
―
TOSHIBA
2-16C1C
Weight: 4.6 g (typ.)
1 2002-10-29
1 page  
3000
C – VCE
1000
300
Cies
100
30
10
Common emitter
3 VGE = 0
f = 1 MHz
Tc = 25°C
1
0.1 0.3
1
3
Coes
Cres
10 30 100 300 1000
Collector-emitter voltage VCE (V)
IF – VF
20
16
12 25
8 −40
Tc= 125°C
4
0
012
Common collector
VGE = 0
345
Forward voltage VF (V)
GT10Q301
1000
800
VCE, VGE – QG
Common emitter
RL = 60 Ω
Tc = 25°C
20
16
600 400
600
400 VCE = 200 V
200
12
8
4
00
0 20 40 60 80 100
Gate charge QG (nC)
trr, Irr – IF
100 1000
30
trr
10
Irr
100
3
Common collector
di/dt = −200 A/µs
VGE = 0
: Tc = 25°C
: Tc = 125°C
1 10
0 2 4 6 8 10 12
Forward current IF (A)
Safe Operating Area
100
50
30 IC max (pulsed)*
10 IC max (continuous)
100 µs*
50 µs*
5
3 DC operation
1
*: Single nonrepetitive
pulse Tc = 25°C
0.5 Curves must be
0.3
derated linearly with
increase in
temperature.
0.1
1 3 10 30
1 ms*
10 ms*
100 300 1000 3000
Collector-emitter voltage VCE (V)
Reverse Bias SOA
100
50
30
10
5
3
1
0.5
0.3 Tj ≤ 125°C
VGE = ±15 V
RG = 43 Ω
0.1
1 3 10 30 100 300 1000 3000
Collector-emitter voltage VCE (V)
5 2002-10-29
5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet GT10Q301.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| GT10Q301 | Insulated Gate Bipolar Transistor | Toshiba Semiconductor |
| Número de pieza | Descripción | Fabricantes |
| SLA6805M | High Voltage 3 phase Motor Driver IC. |
 Sanken |
| SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
 Analog Devices |
|
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
| DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |