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PDF GT50J328 Data sheet ( Hoja de datos )
| Número de pieza | GT50J328 | |
| Descripción | Insulated Gate Bipolar Transistor | |
| Fabricantes | Toshiba Semiconductor | |
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GT50J328
TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT
GT50J328
Current Resonance Inverter Switching Application
Fourth Generation IGBT
Unit: mm
• Enhancement mode type
• High speed
: tf = 0.1 μs (Typ.)
• Low saturation voltage : VCE (sat) = 2.0 V (Typ.)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-emitter voltage
VCES 600 V
Gate-emitter voltage
VGES ±25 V
Continuous collector current
DC
1ms
IC
ICP
50
A
120
Diode forward current
DC
1ms
IF
IFP
30
A
120
Collector power dissipation
(Tc = 25°C)
PC 140 W
Junction temperature
Storage temperature range
Tj 150 °C
Tstg
−55 to 150
°C
JEDEC
JEITA
―
―
Note: Using continuously under heavy loads (e.g. the application of
high temperature/current/voltage and the significant change in
TOSHIBA
2-16C1C
temperature, etc.) may cause this product to decrease in the
Weight: 4.6 g (typ.)
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the
appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling
Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and
estimated failure rate, etc).
Equivalent Circuit
Marking
Gate
Collector
TOSHIBA
50J328
Emitter
Note 1: A line under a Lot No. identifies the indication of product Labels.
[[G]]/RoHS COMPATIBLE or [[G]]/RoHS [[Pb]]
Part No. (or abbreviation code)
Lot No.
Note 1
Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS compatibility of
Product.
The RoHS is the Directive 2002/95/EC of the European Parliament and of the Council of 27 January 2003 on the restriction of
the use of certain hazardous substances in electrical and electronic equipment.
1 2011-03-08
1 page  
70
Common emitter
60 VGE = 15V
IC max – Tc
50
40
30
20
10
0
25
50 75 100 125
Case temperature Tc (°C)
150
GT50J328
102 rth(j-c) - tw
101
ダDイioオdーe ド 部
100
10−1
ＩIＧGＢBＴT部
10−2
10− 310−5
10−4
10−3
Curves should be applied in
Tc=２５℃（t無he限rm大al放lim熱it板ed使a用rea) .
本ﾃﾞｰSﾀiはng、le熱n抵on抗-r制ep限eti領tiv域e にpuのlseみ適
用されTCま=す2。5°(単C 発(inﾊfiﾟnﾙitｽe測h定ea)t sink)
10−2
10−1
100
101
102
Pulse width tw (s)
IF - VF
50 Common collector
VGE = 0
40
30
20 25
10 Tc = 125℃
-40
0
0 0.4 0.8 1.2 1.6 2.0
Diode forward voltage VF (V)
1000
500
300
f = 1 MHz
Tc = 25°C
Cj – VR
100
50
30
10
5
3
1
3 5 10
30 50 100
300 500
Reverse voltage VR (V)
Irr, trr – IF
50
30
500
300
10
5
3
1
0
trr
100
50
Irr
Common collector
30
di/dt = -100 A/µs
VGE = 0
Tc = 25°C
10
5 10 15 20 25 30
Diode forward current IF (A)
10
8
6 trr
4
Irr
2
Irr, trr – di/dt
Cコomレmクonタco接lle地ctor
IF =IF3=03A0 A
Tc T=c2=52°5C°C
200
100
00
0
40
80
120
160
200
di/dt (A/µs)
5 2011-03-08
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet GT50J328.PDF ] | |
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