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PDF GT8G134 Data sheet ( Hoja de datos )
| Número de pieza | GT8G134 | |
| Descripción | Insulated Gate Bipolar Transistor | |
| Fabricantes | Toshiba Semiconductor | |
| Logotipo |  |
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TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT
GT8G134
Strobe Flash Applications
• Compact and Thin (TSSOP-8) package
• Enhancement-mode
• Peak collector current: IC = 150 A (max)
(@VGE=2.5V(min))/
Absolute Maximum Ratings (Ta = 25°C)
GT8G134
Unit: mm
Characteristics
Symbol
Rating
Unit
Collector-emitter voltage
Gate-emitter voltage
DC
Pulse
Collector current
Pulse
(Note 1)
Collector power
dissipation（t＝10 s）
(Note 2a)
(Note 2b)
Junction temperature
Storage temperature range
VCES
VGES
VGES
ICP
PC (1)
PC (2)
Tj
Tstg
400
±4
±5
150
1.1
0.6
150
−55~150
V
V
A
W
W
°C
°C
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the
Toshiba Semiconductor Reliability Handbook (“Handling
Precautions”/Derating Concept and Methods) and individual
reliability data (i.e. reliability test report and estimated failure rate,
etc).
Thermal Characteristics
1,2 EMITTER
3 EMITTER (Gate drive connection)
4 GATE
5,6,7,8 COLLECTOR
JEDEC
―
JEITA
―
TOSHIBA
－
Weight: 0.035 g (typ.)
Circuit Configuration
8765
Characteristics
Symbol
Rating
Unit
Thermal resistance , junction to
ambient (t = 10 s)
(Note2a)
Rth (j-a) (1)
114
°C/W
Thermal resistance , junction to
ambient (t = 10 s)
(Note2b)
Rth (j-a) (2)
208
°C/W
Marking (Note 3)
Note : For (Note 1) , (Note 2a) , (Note 2b) and (Note 3) , Please refer to the
next page.
Part No. (or abbreviation code)
5
6 8G134
7
8
4
3
2
1
1234
Lot No.
A line indicates
lead (Pb)-free package or
lead (Pb)-free finish.
1
2007-07-23
1 page  
VCE – VGE
6
5
4
3
IC = 150 A
120
2 90
60
1
Common emitter
Ta = −40°C
0
012345
Gate-emitter voltage VGE (V)
GT8G134
VCE – VGE
6
5
4
3 IC = 150 A
120
2 90
60
1
Common emitter
Ta = 25°C
0
01 234 5
Gate-emitter voltage VGE (V)
VCE – VGE
6
5
4
3 IC = 150 A
120
2 90
60
1
Common emitter
Ta = 70°C
0
012 34 5
Gate-emitter voltage VGE (V)
400
300
VCE
200
VCE, VGE – QG
Common emitter
VCC = 300 V
RL = 2 Ω
Ta = 25°C
8
6
VGE
4
100 2
00
0 10 20 30 40
Gate charge QG (nC)
Switching Time – RG
10
Switching Time – IC
10
1
0.1
10
toff
tf
ton
tr
Common emitter
VCC = 300 V
VGE = 3 V
IC = 150 A
Ta = 25°C
100 1000
Gate resistance RG (Ω)
toff
tf
1
ton
tr Common emitter
VCC = 300 V
VGE = 3 V
RG = 62 Ω
0.1 Ta = 25°C
0 50 100 150 200
Collector current IC (A)
5 2007-07-23
5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet GT8G134.PDF ] | |
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