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PDF GT45F123 Data sheet ( Hoja de datos )
| Número de pieza | GT45F123 | |
| Descripción | Insulated Gate Bipolar Transistor | |
| Fabricantes | Toshiba Semiconductor | |
| Logotipo |  |
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GT45F123
TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT
GT45F123
For PDP-TV Applications
Unit: mm
• 5th generation (trench gate structure) IGBT
• Enhancement-mode
• Low input capacitance: Cies = 2700pF (typ.)
• Peak collector current: ICP = 200 A (max)
• TO-220SIS package
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-emitter voltage
VCES 300 V
Gate-emitter voltage
VGES
± 30
V
Collector current
Collector power
dissipation
Pulse
(Note 1)
Tc=25°C
Ta=25°C
ICP
PC
200 A
26
W
2
1. Gate
2. Collector
3. Emitter
Junction temperature
Storage temperature range
Tj 150 °C
Tstg
−55 to 150
°C
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
JEDEC
JEITA
TOSHIBA
-
-
2-10U1C
temperature, etc.) may cause this product to decrease in the
Weight: 2 g (typ.)
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Thermal Characteristics
Characteristics
Thermal resistance , junction to case
(Tc = 25°C)
Thermal resistance , junction to
ambient
(Ta = 25°C)
Marking
Symbol
Rth (j-c)
Rth (j-a)
Rating
4.8
62.5
Unit
°C/W
°C/W
45F123
Part No. (or abbreviation code)
Lot code
Note 1: ICP maximum rating(200A) is limited by pulse width (3 μs ).
1
2007-09-13
1 page  
500
Common emitter
RL = 2.5 Ω
Tc = 25°C
400
VCE, VGE – Qg
300
VCE = 300 V
200
100 200
100
0
0 50 100
Gate charge Qg (nC)
20
16
12
8
4
0
150
GT45F123
10000
1000
C – VCE
Cies
Coes
100
Cres
10
Common emitter
VGE = 0 V
f = 1 MHZ
1 Tc = 25°C
0.1
1
10
Collector−emitter voltage VCE (V)
100
Switching time − RG
1 Common emitter
VCC = 250 V
VGG = +15 V / 0 V
IC = 80 A
Tc = 25 ℃
toff
ton
tf
tr
0.1
1 10
Gate resistance RG (Ω)
100
Switching time – IC
1
toff
tf
ton
0.1
tr
0.01
20
Common emitter
VCC = 250 V
VGG = +15 V / 0 V
RG = 5.1 Ω
Tc = 25 ℃
40 60 80 100 120
Collector current IC (A)
5 2007-09-13
5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet GT45F123.PDF ] | |
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