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PDF HCS241K Data sheet ( Hoja de datos )

Número de pieza HCS241K
Descripción Radiation Hardened Inverting Octal Three-State Buffer/Line Driver
Fabricantes Intersil Corporation 
Logotipo Intersil Corporation Logotipo



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No Preview Available ! HCS241K Hoja de datos, Descripción, Manual

HCS241MS
September 1995
Radiation Hardened Inverting
Octal Three-State Buffer/Line Driver
Features
Pinouts
• 3 Micron Radiation Hardened SOS CMOS
• Total Dose 200K RAD (Si)
• SEP Effective LET No Upsets: >100 MEV-cm2/mg
• Single Event Upset (SEU) Immunity < 2 x 10-9 Errors/
Bit-Day (Typ)
• Dose Rate Survivability: >1 x 1012 RAD (Si)/s
• Dose Rate Upset >1010 RAD (Si)/Sec. 20ns Pulse
• Latch Up Free Under Any Conditions
• Military Temperature Range: -55oC to +125oC
• Significant Power Reduction Compared to LSTTL ICs
• DC Operating Voltage Range: 4.5V to 5.5V
• Input Logic Levels
- VIL = 30% VCC Max
- VIH = 70% VCC Min
• Input Compatibility Levels Ii 5µA at VOL, VOH
20 LEAD CERAMIC DUAL-IN-LINE
METAL SEAL PACKAGE (SBDIP)
MIL-STD-1835 CDIP2-T20, LEAD FINISH C
TOP VIEW
AE 1
AI1 2
BO4 3
AI2 4
BO3 5
AI3 6
BO2 7
AI4 8
BO1 9
GND 10
20 VCC
19 BE
18 AO1
17 BI4
16 AO2
15 BI3
14 AO3
13 BI2
12 AO4
11 BI1
20 LEAD CERAMIC METAL SEAL
FLATPACK PACKAGE (FLATPACK)
MIL-STD-1835 CDFP4-F20, LEAD FINISH C
TOP VIEW
Description
The Intersil HCS241MS is a Radiation Hardened inverting
octal three-state buffer/line driver with two output enables,
one active low, and one active high.
The HCS241MS utilizes advanced CMOS/SOS technology
to achieve high-speed operation. This device is a member of
radiation hardened, high-speed, CMOS/SOS Logic Family.
The HCS241MS is supplied in a 20 lead ceramic flatpack
(K suffix) or a SBDIP package (D suffix).
AE
AI1
BO4
AI2
BO3
AI3
BO2
AI4
BO1
GND
1 20
2 19
3 18
4 17
5 16
6 15
7 14
8 13
9 12
10 11
VCC
BE
AO1
BI4
AO2
BI3
AO3
BI2
AO4
BI1
Ordering Information
PART NUMBER
HCS241DMSR
HCS241KMSR
HCS241D/Sample
HCS241K/Sample
HCS241HMSR
TEMPERATURE RANGE
-55oC to +125oC
-55oC to +125oC
+25oC
+25oC
+25oC
SCREENING LEVEL
Intersil Class S Equivalent
Intersil Class S Equivalent
Sample
Sample
Die
PACKAGE
20 Lead SBDIP
20 Lead Ceramic Flatpack
20 Lead SBDIP
20 Lead Ceramic Flatpack
Die
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
1-888-INTERSIL or 321-724-7143 | Copyright © Intersil Corporation 1999
302
Spec Number 518838
File Number 3122.1

1 page




HCS241K pdf
Specifications HCS241MS
TABLE 4. DC POST RADIATION ELECTRICAL PERFORMANCE CHARACTERISTICS
PARAMETER
Supply Current
Output Current (Sink)
Output Current (Source)
Output Voltage Low
SYMBOL
(NOTES 1, 2)
CONDITIONS
ICC VIN = 5.5V, VIN = VCC or GND
IOL VCC = VIH = 4.5V, VOUT = 0.4V, VIL = 0
IOH VCC = VIH = 4.5V,
VOUT = VCC - 0.4V, VIL = 0
VOL
VCC = 4.5V, VIH = 3.15V, VIL = 1.35V,
IOL = 50µA
TEMPERATURE
+25oC
+25oC
+25oC
+25oC
Output Voltage High
VOH
VCC = 5.5V, VIH = 3.85V, VIL = 1.65V,
IOL = 50µA
VCC = 4.5V, VIH = 3.15V, VIL = 1.35V,
IOH = -50µA
+25oC
Three-State Output
Leakage Current
Input Leakage Current
Noise Immunity
Functional
Propagation Delay
VCC = 5.5V, VIH = 3.85V, VIL = 1.65V,
IOH = -50µA
IOZ VCC = 5.5V, Force Voltage = 0V or VCC
IIN VCC = 5.5V, VIN = VCC or GND
FN VCC = 4.5V, VIL = 3.15V, VIH = 1.35V, (Note 2)
TPLH1
TPHL1
TPZL1
TPZL2
TPLZ1
TPLZ2
TPZH1
TPZH2
TPHZ1
TPHZ2
VCC = 4.5V, VIH = 4.5V, VIL = 0V
VCC = 4.5V, VIH = 4.5V, VIL = 0V
VCC = 4.5V, VIH = 4.5V, VIL = 0V
VCC = 4.5V, VIH = 4.5V, VIL = 0V
VCC = 4.5V, VIH = 4.5V, VIL = 0V
VCC = 4.5V, VIH = 4.5V, VIL = 0V
+25oC
+25oC
+25oC
+25oC
+25oC
+25oC
+25oC
+25oC
+25oC
NOTES:
1. All voltages referenced to device GND.
2. For functional tests, VO 4.0V is recognized as a logic “1”, and VO 0.5V is recognized as a logic “0”.
200K RAD
LIMITS
MIN MAX
- 0.75
6-
-6 -
- 0.1
- 0.1
VCC-
0.1
VCC-
0.1
-
-
-
±50
- ±5
--
2 25
2 25
2 30
2 30
2 24
2 30
UNITS
mA
mA
mA
V
V
V
V
µA
µA
-
ns
ns
ns
ns
ns
ns
TABLE 5. BURN-IN AND OPERATING LIFE TEST, DELTA PARAMETERS (+25oC)
PARAMETER
GROUP B
SUBGROUP
DELTA LIMIT
ICC 5 +12µA
IOL/IOH
5 -15% of 0 Hour
IOZ 5 ±200nA
Spec Number 518838
306

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