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IPD320N20N3G fiches techniques PDF

Infineon - Power-Transistor

Numéro de référence IPD320N20N3G
Description Power-Transistor
Fabricant Infineon 
Logo Infineon 





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IPD320N20N3G fiche technique
IPD320N20N3 G
OptiMOSTM3 Power-Transistor
Features
• N-channel, normal level
• Excellent gate charge x R DS(on) product (FOM)
• Very low on-resistance R DS(on)
Product Summary
V DS
R DS(on),max
ID
• 175 °C operating temperature
• Pb-free lead plating; RoHS compliant
• Qualified according to JEDEC1) for target application
• Halogen-free according to IEC61249-2-21
• Ideal for high-frequency switching and synchronous rectification
Type
IPD320N20N3 G
200 V
32 mΩ
34 A
Package
Marking
PG-TO252-3
320N20N
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Continuous drain current
I D T C=25 °C
T C=100 °C
Pulsed drain current2)
I D,pulse T C=25 °C
Avalanche energy, single pulse
E AS I D=34 A, R GS=25 Ω
Gate source voltage
V GS
Power dissipation
P tot T C=25 °C
Operating and storage temperature T j, T stg
IEC climatic category; DIN IEC 68-1
1)J-STD20 and JESD22
2) See figure 3
Rev. 2.2
page 1
Value
34
24
136
190
±20
136
-55 ... 175
55/175/56
Unit
A
mJ
V
W
°C
2009-10-22

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