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PDF IPD30N08S2L-21 Data sheet ( Hoja de datos )
| Número de pieza | IPD30N08S2L-21 | |
| Descripción | Power-Transistor | |
| Fabricantes | Infineon | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de IPD30N08S2L-21 (archivo pdf) en la parte inferior de esta página. Total 8 Páginas | ||
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OptiMOS® Power-Transistor
Features
• N-channel Logic Level - Enhancement mode
• Automotive AEC Q101 qualified
• MSL1 up to 260°C peak reflow
• 175°C operating temperature
• Green package (lead free)
• Ultra low Rds(on)
• 100% Avalanche tested
IPD30N08S2L-21
Product Summary
V DS
R DS(on),max
ID
75 V
20.5 mΩ
30 A
PG-TO252-3-11
Type
IPD30N08S2L-21
Package
Marking
PG-TO252-3-11 2N08L21
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol
Conditions
Continuous drain current
I D T C=25 °C, V GS=10 V1)
T C=100 °C,
V GS=10 V2)
Pulsed drain current2)
I D,pulse T C=25 °C
Avalanche energy, single pulse
E AS I D=30A
Gate source voltage
V GS
Power dissipation
P tot T C=25 °C
Operating and storage temperature T j, T stg
IEC climatic category; DIN IEC 68-1
Value
30
30
120
240
±20
136
-55 ... +175
55/175/56
Unit
A
mJ
V
W
°C
Rev. 1.0
page 1
2006-07-18
1 page  
IPD30N08S2L-21
5 Typ. output characteristics
I D = f(V DS); T j = 25 °C
parameter: V GS
120
10 V 5 V
100
80
4.5 V
6 Typ. drain-source on-state resistance
R DS(on) = (I D); T j = 25 °C
parameter: V GS
120
3V
100
3.5 V
4V
4.5 V
80
60
40
20
0
0246
V DS [V]
7 Typ. transfer characteristics
I D = f(V GS); V DS = 6V
parameter: T j
120
100
80
60
4V
3.5 V
3V
2.5 V
8 10
40
5V
20
10 V
0
0 20 40 60 80 100 120
I D [A]
8 Typ. Forward transconductance
g fs = f(I D); T j = 25°C
parameter: g fs
80
60
60
40
20
0
0
Rev. 1.0
175 °C
25 °C
-55 °C
1234
V GS [V]
40
20
0
50
page 5
20 40 60 80 100
I D [A]
2006-07-18
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet IPD30N08S2L-21.PDF ] | |
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