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IPD30N03S4L-09 fiches techniques PDF

Infineon - Power-Transistor

Numéro de référence IPD30N03S4L-09
Description Power-Transistor
Fabricant Infineon 
Logo Infineon 





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IPD30N03S4L-09 fiche technique
OptiMOS®-T2 Power-Transistor
Features
• N-channel - Enhancement mode
• Automotive AEC Q101 qualified
• MSL1 up to 260°C peak reflow
• 175°C operating temperature
• Green product (RoHS compliant)
• 100% Avalanche tested
IPD30N03S4L-09
Product Summary
V DS
R DS(on),max
ID
30 V
9.0 m
30 A
PG-TO252-3-11
Type
IPD30N03S4L-09
Package
Marking
PG-TO252-3-11 4N03L09
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol
Conditions
Continuous drain current1)
I D T C=25°C, V GS=10V
T C=100°C, V GS=10V2)
Pulsed drain current2)
I D,pulse T C=25°C
Avalanche energy, single pulse2) E AS I D=30A
Avalanche current, single pulse I AS -
Gate source voltage
V GS
-
Power dissipation
P tot T C=25°C
Operating and storage temperature T j, T stg -
IEC climatic category; DIN IEC 68-1 -
-
Value
30
30
120
28
30
±16
42
-55 ... +175
55/175/56
Unit
A
mJ
A
V
W
°C
Rev. 1.0
page 1
2008-08-20

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