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PDF K3715 Data sheet ( Hoja de datos )
| Número de pieza | K3715 | |
| Descripción | MOSFET ( Transistor ) - 2SK3715 | |
| Fabricantes | NEC | |
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DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK3715
SWITCHING
N-CHANNEL POWER MOS FET
DESCRIPTION
The 2SK3715 is N-channel MOS Field Effect Transistor
designed for high current switching applications.
ORDERING INFORMATION
PART NUMBER
PACKAGE
2SK3715
Isolated TO-220
FEATURES
• Super low on-state resistance
RDS(on)1 = 6.0 mΩ MAX. (VGS = 10 V, ID = 38 A)
RDS(on)2 = 9.5 mΩ MAX. (VGS = 4 V, ID = 38 A)
• Low Ciss: Ciss = 8400 pF TYP.
• Built-in gate protection diode
(Isolated TO-220)
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage (VGS = 0 V)
VDSS
60
Gate to Source Voltage (VDS = 0 V)
VGSS
±20
Drain Current (DC) (TC = 25°C)
Drain Current (pulse) Note1
ID(DC)
ID(pulse)
±75
±300
Total Power Dissipation (TC = 25°C)
PT1
40
Total Power Dissipation (TA = 25°C)
PT2
2.0
Channel Temperature
Storage Temperature
Single Avalanche Current Note2
Single Avalanche Energy Note2
Tch 150
Tstg −55 to +150
IAS 67
EAS 450
V
V
A
A
W
W
°C
°C
A
mJ
Notes 1. PW ≤ 10 µs, Duty Cycle ≤ 1%
2. Starting Tch = 25°C, VDD = 30 V, RG = 25 Ω, VGS = 20 → 0 V
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
Document No. D16378EJ2V0DS00 (2nd edition)
Date Published August 2003 NS CP(K)
Printed in Japan
The mark shows major revised points.
2002
1 page  
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
www.DataSCheHeAt4NUN.EcoLmTEMPERATURE
12
ID = 38 A
Pulsed
10
VGS = 4 V
8
6
10 V
4
2
0
-50 -25 0
25 50 75 100 125 150
Tch - Channel Temperature - °C
2SK3715
CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE
10000
C iss
1000
C oss
C rss
VGS = 0 V
f = 1 MHz
100
0.1
1
10
VDS - Drain to Source Voltage - V
100
1000
100
10
SWITCHING CHARACTERISTICS
td(off)
VDD = 30 V
VGS = 10 V
RG = 0 Ω
td(on)
tr tf
1
0.1
1 10
ID - Drain Current - A
100
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
50 10
45 9
40
VDD = 48 V
35 30 V
12 V
30
VGS
8
7
6
25 5
20 4
15 3
10
5
0
0
VDS
ID = 75 A
2
1
0
20 40 60 80 100 120 140 160
QG - Gate Charge - nC
1000
SOURCE TO DRAIN DIODE
FORWARD VOLTAGE
VGS = 10 V
100
4V
10
0V
1
0.1
0.01
0
Pulsed
0.5 1 1.5
VF(S-D) - Source to Drain Voltage - V
1000
REVERSE RECOVERY TIME vs.
DIODE FORWARD CURRENT
di/dt = 50 A/µs
VGS = 0 V
100
10
0.1
1 10
IF - Diode Forward Current - A
100
Data Sheet D16378EJ2V0DS
5
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet K3715.PDF ] | |
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