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PDF NX7002AKW Data sheet ( Hoja de datos )
| Número de pieza | NX7002AKW | |
| Descripción | MOSFET ( Transistor ) | |
| Fabricantes | NXP Semiconductors | |
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NX7002AKW
60 V, single N-channel Trench MOSFET
11 July 2012
Product data sheet
1. Product profile
1.1 General description
N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT323 (SC-70)
Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
1.2 Features and benefits
• Very fast switching
• Trench MOSFET technology
• ESD protected
1.3 Applications
• Relay driver
• High-speed line driver
• Low-side loadswitch
• Switching circuits
1.4 Quick reference data
Table 1. Quick reference data
Symbol
Parameter
Conditions
Min Typ Max Unit
VDS drain-source voltage Tj = 25 °C
- - 60 V
VGS gate-source voltage
-20 -
20 V
ID
drain current
VGS = 10 V; Tamb = 25 °C
[1] - - 170 mA
Static characteristics
RDSon
drain-source on-state VGS = 10 V; ID = 100 mA; Tj = 25 °C
resistance
- 3 4.5 Ω
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 1 cm2.
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NXP Semiconductors
103
Zth(j-a)
(K/W)
102
10
duty cycle = 1
0.75
0.5
0.33
0.2
0.25
0.1
0.05
0.02
0.01
0
1
NX7002AKW
60 V, single N-channel Trench MOSFET
017aaa483
10-1
10-5
10-4
10-3
10-2
10-1
FR4 PCB, standard footprint
1
10 102 103
tp (s)
Fig. 4. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
103
Zth(j-a)
(K/W)
102
duty cycle = 1
0.75
0.5
0.33 0.25
0.2
0.1
0.05
10
0.01
0.02
0
017aaa484
1
10-1
10-5
10-4
10-3
10-2
FR4 PCB, mounting pad for drain 1 cm2
10-1
1
10 102 103
tp (s)
Fig. 5. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
7. Characteristics
Table 7. Characteristics
Symbol
Parameter
Conditions
Static characteristics
V(BR)DSS
drain-source
breakdown voltage
ID = 250 µA; VGS = 0 V; Tj = 25 °C
VGSth
gate-source threshold ID = 250 µA; VDS = VGS; Tj = 25 °C
voltage
IDSS drain leakage current VDS = 60 V; VGS = 0 V; Tj = 25 °C
VDS = 60 V; VGS = 0 V; Tj = 150 °C
NX7002AKW
All information provided in this document is subject to legal disclaimers.
Product data sheet
11 July 2012
Min Typ Max Unit
60 - - V
1.1 1.6 2.1 V
- - 1 µA
- - 10 µA
© NXP B.V. 2012. All rights reserved
5 / 14
5 Page 
NXP Semiconductors
NX7002AKW
60 V, single N-channel Trench MOSFET
1.425
(3×)
4.6
2.575
3.65 2.1
Fig. 20. Wave soldering footprint for SOT323 (SC-70)
1.8
09
(2×)
solder lands
solder resist
occupied area
Dimensions in mm
preferred transport
direction during soldering
sot323_fw
11. Revision history
Table 8. Revision history
Data sheet ID
Release date
Data sheet status
NX7002AKW v.2
20120711
Product data sheet
Modifications:
• Characteristics: IGSS value corrected
NX7002AKW v.1
20120301
Product data sheet
Change notice
-
-
Supersedes
NX7002AKW v.1
-
NX7002AKW
Product data sheet
All information provided in this document is subject to legal disclaimers.
11 July 2012
© NXP B.V. 2012. All rights reserved
11 / 14
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