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PDF HCS00MS Data sheet ( Hoja de datos )
| Número de pieza | HCS00MS | |
| Descripción | Radiation Hardened Quad 2-Input NAND Gate | |
| Fabricantes | Intersil Corporation | |
| Logotipo |  |
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HCS00MS
August 1995
Radiation Hardened
Quad 2-Input NAND Gate
Features
Pinouts
• 3 Micron Radiation Hardened SOS CMOS
• Total Dose 200K RAD (Si)
• SEP Effective LET No Upsets: >100 MEV-cm2/mg
• Single Event Upset (SEU) Immunity < 2 x 10-9 Errors/Bit-Day
(Typ)
• Dose Rate Survivability: >1 x 1012 RAD (Si)/s
• Dose Rate Upset >1010 RAD (Si)/s 20ns Pulse
• Cosmic Ray Upset Immunity < 2 x 10-9 Errors/Gate Day (Typ)
• Latch-Up Free Under Any Conditions
• Military Temperature Range: -55oC to +125oC
• Significant Power Reduction Compared to LSTTL ICs
• DC Operating Voltage Range: 4.5V to 5.5V
• Input Logic Levels
- VIL = 30% of VCC Max
- VIH = 70% of VCC Min
• Input Current Levels Ii ≤ 5µA at VOL, VOH
Description
The Intersil HCS00MS is a Radiation Hardened Quad 2-Input
NAND Gate. A high on both inputs forces the output to a Low
state.
The HCS00MS utilizes advanced CMOS/SOS technology to
achieve high-speed operation. This device is a member of radia-
tion hardened, high-speed, CMOS/SOS Logic Family.
The HCS00MS is supplied in a 14 lead Ceramic flatpack (K suffix)
or a SBDIP Package (D suffix).
Ordering Information
PART
NUMBER
TEMPERATURE SCREENING
RANGE
LEVEL
PACKAGE
HCS00DMSR -55oC to +125oC Intersil Class 14 Lead SBDIP
S Equivalent
14 LEAD CERAMIC DUAL-IN-LINE
METAL SEAL PACKAGE (SBDIP)
MIL-STD-1835 CDIP2-T14
TOP VIEW
A1 1
B1 2
Y1 3
A2 4
B2 5
Y2 6
GND 7
14 VCC
13 B4
12 A4
11 Y4
10 B3
9 A3
8 Y3
14 LEAD CERAMIC METAL SEAL FLATPACK PACKAGE
(FLATPACK) MIL-STD-1835 CDFP3-F14
TOP VIEW
A1
B1
Y1
A2
B2
Y2
GND
1 14
2 13
3 12
4 11
5 10
69
78
VCC
B4
A4
Y4
B3
A3
Y3
TRUTH TABLE
INPUTS
OUTPUTS
An Bn Yn
L LH
L HH
HLH
HH L
NOTE: L = Logic Level Low, H = Logic level High
HCS00KMSR
HCS00D/
Sample
HCS00K/
Sample
HCS00HMSR
-55oC to +125oC Intersil Class
S Equivalent
+25oC
Sample
+25oC
Sample
+25oC
Die
14 Lead Ceramic
Flatpack
14 Lead SBDIP
14 Lead Ceramic
Flatpack
Die
Functional Diagram
An
(1, 4, 9, 12)
Bn
(2, 5, 10, 13)
Yn
(3, 6, 8, 11)
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
1-888-INTERSIL or 321-724-7143 | Copyright © Intersil Corporation 1999
15
Spec Number 518743
File Number 2138.2
1 page  
Specifications HCS00MS
TABLE 8. STATIC AND DYNAMIC BURN-IN TEST CONNECTIONS
OSCILLATOR
OPEN
GROUND
1/2 VCC = 3V ± 0.5V VCC = 6V ± 0.5V
50kHz
25kHz
STATIC BURN-IN I TEST CONDITIONS (Note 1)
3, 6, 8, 11
1, 2, 4, 5, 7, 9, 10, 12,
13
-
14 - -
STATIC BURN-IN II TEST CONNECTIONS (Note 1)
3, 6, 8, 11
7
-
1, 2, 4, 5, 9, 10, 12,
-
13, 14
-
DYNAMIC BURN-IN I TEST CONNECTIONS (Note 2)
-
7
3, 6, 8, 11
14
1, 2, 4, 5, 9, 10,
-
12, 13
NOTES:
1. Each pin except VCC and GND will have a resistor of 10KΩ ± 5% static burn-in.
2. Each pin except VCC and GND will have a resistor of 1KΩ ± 5% static burn-in.
TABLE 9. IRRADIATION TEST CONNECTIONS
OPEN
GROUND
VCC = 5V ± 0.5V
3, 6, 8, 11 7 1, 2, 4, 5, 9, 10, 12, 13, 14
NOTE: Each pin except VCC and GND will have a resistor of 47KΩ ± 5%. Group E, Subgroup 2,
sample size is 4 dice/wafer, 0 failures.
Spec Number 518743
19
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| PDF Descargar | [ Datasheet HCS00MS.PDF ] | |
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