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Numéro de référence | NX6353EP | ||
Description | 1 270/1 290/1 310/1 330/1 350 nm AlGaInAs MQW-DFB LASER DIODE | ||
Fabricant | California Eastern Labs | ||
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NX6353EP Series
A Business Partner of Renesas Electronics Corporation.
Preliminary
Data Sheet
LASER DIODE
1 270/1 290/1 310/1 330/1 350 nm AlGaInAs MQW-DFB LASER DIODE
FOR 9.8Gbps CPRI, 10G Ethernet APPLICATION
R08DS0089EJ0100
Rev.1.00
Feb 25, 2013
DESCRIPTION
The NX6353EP series is a 1 270/1 290/1 310/1 330/1 350 nm Multiple
Quantum Well (MQW) structured Distributed Feed-Back (DFB) laser diode
with InGaAs monitor PIN-PD.
APPLICATIONS
• 9.8 Gbps CPRI
• 10G Ethernet
FEATURES
• Optical output power
• Low threshold current
• Differential efficiency
• Wide operating temperature range
• InGaAs monitor PIN-PD
• CAN package
• Focal point
PO = 8.5 mW
Ith = 7 mA
ηd = 0.35 W/A
TC = −40 to +85°C
φ 5.6 mm
6.2 mm
R08DS0089EJ0100 Rev.1.00
Feb 25, 2013
Page 1 of 5
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Pages | Pages 6 | ||
Télécharger | [ NX6353EP ] |
No | Description détaillée | Fabricant |
NX6353EP | 1 270/1 290/1 310/1 330/1 350 nm AlGaInAs MQW-DFB LASER DIODE | California Eastern Labs |
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TSPC106 | PCI Bus Bridge Memory Controller | ATMEL |
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