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California Eastern Labs - 1 270/1 290/1 310/1 330/1 350 nm AlGaInAs MQW-DFB LASER DIODE

Numéro de référence NX6353EP
Description 1 270/1 290/1 310/1 330/1 350 nm AlGaInAs MQW-DFB LASER DIODE
Fabricant California Eastern Labs 
Logo California Eastern Labs 





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NX6353EP fiche technique
NX6353EP Series
A Business Partner of Renesas Electronics Corporation.
Preliminary
Data Sheet
LASER DIODE
1 270/1 290/1 310/1 330/1 350 nm AlGaInAs MQW-DFB LASER DIODE
FOR 9.8Gbps CPRI, 10G Ethernet APPLICATION
R08DS0089EJ0100
Rev.1.00
Feb 25, 2013
DESCRIPTION
The NX6353EP series is a 1 270/1 290/1 310/1 330/1 350 nm Multiple
Quantum Well (MQW) structured Distributed Feed-Back (DFB) laser diode
with InGaAs monitor PIN-PD.
APPLICATIONS
9.8 Gbps CPRI
10G Ethernet
FEATURES
Optical output power
Low threshold current
Differential efficiency
Wide operating temperature range
InGaAs monitor PIN-PD
CAN package
Focal point
PO = 8.5 mW
Ith = 7 mA
ηd = 0.35 W/A
TC = 40 to +85°C
φ 5.6 mm
6.2 mm
R08DS0089EJ0100 Rev.1.00
Feb 25, 2013
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