|
|
Numéro de référence | NX6240GP | ||
Description | 1 270nm AlGaInAs MQW-DFB LASER DIODE | ||
Fabricant | California Eastern Labs | ||
Logo | |||
NX6240GP
A Business Partner of Renesas Electronics Corporation.
Preliminary
Data Sheet
LASER DIODE
1 270 nm AlGaInAs MQW-DFB LASER DIODE
FOR 10 Gb/s E-PON ONU APPLICATION
R08DS0057EJ0100
Rev.1.00
Mar 01, 2012
DESCRIPTION
The NX6240GP is a 1 270 nm Multiple Quantum Well (MQW) structured
Distributed Feed-Back (DFB) laser diode with InGaAs monitor PIN-PD.
APPLICATIONS
• 10 Gb/s E-PON ONU
FEATURES
• Optical output power
• Low threshold current
• Differential efficiency
• Wide operating temperature range
• InGaAs monitor PIN-PD
• CAN package
• Focal point
PO = 8.5 mW
Ith = 8 mA
ηd = 0.3 W/A
TC = −5 to +85°C
φ 5.6 mm
10.2 mm
R08DS0057EJ0100 Rev.1.00
Mar 01, 2012
Page 1 of 5
|
|||
Pages | Pages 6 | ||
Télécharger | [ NX6240GP ] |
No | Description détaillée | Fabricant |
NX6240GP | 1 270nm AlGaInAs MQW-DFB LASER DIODE | California Eastern Labs |
US18650VTC5A | Lithium-Ion Battery | Sony |
TSPC106 | PCI Bus Bridge Memory Controller | ATMEL |
TP9380 | NPN SILICON RF POWER TRANSISTOR | Advanced Semiconductor |
www.DataSheetWiki.com | 2020 | Contactez-nous | Recherche |