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California Eastern Labs - 1 270nm AlGaInAs MQW-DFB LASER DIODE

Numéro de référence NX6240GP
Description 1 270nm AlGaInAs MQW-DFB LASER DIODE
Fabricant California Eastern Labs 
Logo California Eastern Labs 





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NX6240GP fiche technique
NX6240GP
A Business Partner of Renesas Electronics Corporation.
Preliminary
Data Sheet
LASER DIODE
1 270 nm AlGaInAs MQW-DFB LASER DIODE
FOR 10 Gb/s E-PON ONU APPLICATION
R08DS0057EJ0100
Rev.1.00
Mar 01, 2012
DESCRIPTION
The NX6240GP is a 1 270 nm Multiple Quantum Well (MQW) structured
Distributed Feed-Back (DFB) laser diode with InGaAs monitor PIN-PD.
APPLICATIONS
10 Gb/s E-PON ONU
FEATURES
Optical output power
Low threshold current
Differential efficiency
Wide operating temperature range
InGaAs monitor PIN-PD
CAN package
Focal point
PO = 8.5 mW
Ith = 8 mA
ηd = 0.3 W/A
TC = 5 to +85°C
φ 5.6 mm
10.2 mm
R08DS0057EJ0100 Rev.1.00
Mar 01, 2012
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