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NTB5412N fiches techniques PDF

ON Semiconductor - Power MOSFET ( Transistor )

Numéro de référence NTB5412N
Description Power MOSFET ( Transistor )
Fabricant ON Semiconductor 
Logo ON Semiconductor 





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NTB5412N fiche technique
NTB5412N, NTP5412N
Power MOSFET
60 Amps, 60 Volts
N-Channel D2PAK, TO-220
Features
Low RDS(on)
High Current Capability
Avalanche Energy Specified
These are PbFree Devices
Applications
LED Lighting and LED Backlight Drivers
DCDC Converters
DC Motor Drivers
Power Supplies Secondary Side Synchronous Rectification
MAXIMUM RATINGS (TJ = 25°C Unless otherwise specified)
Parameter
Symbol Value
DraintoSource Voltage
GatetoSource Voltage Continuous
GatetoSource Voltage Nonrepetitive
(TP < 10 ms)
Continuous Drain
C(Nuortreen1t)RqJC
Steady
State
TC = 25°C
TC = 100°C
Power Dissipation
RqJC (Note 1)
Steady TC = 25°C
State
Pulsed Drain Current
tp = 10 ms
Operating and Storage Temperature Range
VDSS
VGS
VGS
ID
PD
IDM
TJ, Tstg
60
$20
$30
60
44
125
155
55 to
175
Source Current (Body Diode)
Single Pulse DraintoSource Avalanche
Energy Starting TJ = 25°C
(VDD = 50 Vdc, VGS = 10 Vdc, IL(pk) = 60 A,
L = 0.1 mH, RG = 25 W)
Lead Temperature for Soldering
Purposes, 1/8from Case for 10 Seconds
IS 60
EAS 180
TL 260
Unit
V
V
V
A
W
A
°C
A
mJ
°C
THERMAL RESISTANCE RATINGS
Parameter
Symbol Max Unit
JunctiontoCase (Drain) Steady State
(Note 1)
RqJC
RqJA
1.2 °C/W
43.2
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Surface mounted on FR4 board using 1 sq in pad size,
(Cu Area 1.127 sq in [1 oz] including traces).
© Semiconductor Components Industries, LLC, 2008
November, 2008 Rev. 1
1
http://onsemi.com
V(BR)DSS
60 V
RDS(ON) MAX
14 mW @ 10 V
ID MAX
(Note 1)
60 A
NChannel
D
G
S
4
4
12
3
12
3
TO220AB
CASE 221A
STYLE 5
D2PAK
CASE 418B
STYLE 2
MARKING DIAGRAM
& PIN ASSIGNMENT
4
Drain
4
Drain
NTP
5412NG
AYWW
1
Gate
3
Source
NTB
5412NG
AYWW
1
Gate
2
Drain
3
Source
2
Drain
G = PbFree Device
A = Assembly Location
Y = Year
WW = Work Week
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 5 of this data sheet.
Publication Order Number:
NTB5412N/D

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