(PDF) NX6410GH Datasheet - InGaAsP MQW-DFB LASER DIODE

Número de pieza	NX6410GH
Descripción	InGaAsP MQW-DFB LASER DIODE
Fabricantes	California Eastern Labs
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No Preview Available ! LASER DIODE NX6410GH 1 490 nm InGaAsP MQW-DFB LASER DIODE FOR 2.5 Gb/s FTTH PON APPLICATION DESCRIPTION The NX6410GH is a 1 490 nm Multiple Quantum Well (MQW) structured Distributed Feed-Back (DFB) laser diode with InGaAs monitor PIN-PD. APPLICATION • 2.5 Gb/s FTTH PON (Fiber To The Home Passive Optical Network) FEATURES • Optical output power • Low threshold current • Differential efficiency • Wide operating temperature range • InGaAs monitor PIN-PD • CAN package • Focal point Po = 14.0 mW lth = 10 mA ηd = 0.3 W/A TC = −40 to +85°C φ 5.6 mm 7.5 mm Document No. PL10643EJ04V0DS (4th edition) Date Published March 2010 NS The mark shows major revised points. The revised points can be easily searched by copying an "" in the PDF file and specifying it in the "Find what:" field. 1 page REFERENCE Opto-Electronics Devices Pamphlet Document Name NX6410GH Document No. PX10160E Data Sheet PL10643EJ04V0DS 5 5 Page

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PDF NX6410GH Data sheet ( Hoja de datos )