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PDF NX3008PBK Data sheet ( Hoja de datos )
| Número de pieza | NX3008PBK | |
| Descripción | 30V 230mA P-channel Trench MOSFET | |
| Fabricantes | NXP Semiconductors | |
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NX3008PBK
30 V, 230 mA P-channel Trench MOSFET
Rev. 1 — 1 August 2011
Product data sheet
1. Product profile
1.1 General description
P-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23
(TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET
technology.
1.2 Features and benefits
Very fast switching
Low threshold voltage
Trench MOSFET technology
ESD protection up to 2 kV
AEC-Q101 qualified
1.3 Applications
Relay driver
High-speed line driver
High-side loadswitch
Switching circuits
1.4 Quick reference data
Table 1. Quick reference data
Symbol Parameter
Conditions
Min Typ Max Unit
VDS drain-source voltage
VGS gate-source voltage
ID drain current
Static characteristics
Tj = 25 °C
VGS = -4.5 V; Tamb = 25 °C
-
-8
[1] -
-
-
-
-30
8
-230
V
V
mA
RDSon
drain-source on-state VGS = -4.5 V;
resistance
ID = -200 mA; Tj = 25 °C
- 2.8 4.1 Ω
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 1 cm2.
1 page  
NXP Semiconductors
NX3008PBK
30 V, 230 mA P-channel Trench MOSFET
6. Thermal characteristics
Table 6.
Symbol
Rth(j-a)
Thermal characteristics
Parameter
thermal resistance from junction to ambient
Conditions
in free air
Rth(j-sp)
thermal resistance from junction to solder
point
Min Typ Max Unit
[1] - 310 370 K/W
[2] - 260 300 K/W
- - 115 K/W
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 1 cm2.
103
Zth(j-a)
(K/W)
102
duty cycle = 1
0.5
0.25
0.75
0.33
0.2
0.1 0.05
0.02
10 0.01
0
017aaa015
1
10−3
10−2
FR4 PCB, standard footprint
10−1
1
10 102 103
tp (s)
Fig 4. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
103
Zth(j-a)
(K/W)
102
duty cycle = 1
0.5
0.25
0.75
0.33
0.2
0.1 0.05
10
0
0.02
0.01
017aaa016
1
10−3
10−2
10−1
FR4 PCB, mounting pad for drain 1 cm2
1
10 102 103
tp (s)
Fig 5. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
NX3008PBK
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 1 — 1 August 2011
© NXP B.V. 2011. All rights reserved.
5 of 16
5 Page 
NXP Semiconductors
9. Package outline
Plastic surface-mounted package; 3 leads
NX3008PBK
30 V, 230 mA P-channel Trench MOSFET
SOT23
DB
E AX
3
1
e1 bp
e
2
wM B
HE v M A
A
A1
Q
detail X
Lp
c
0 1 2 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT
A
A1
max.
bp
c
D
mm
1.1
0.9
0.1
0.48 0.15
0.38 0.09
3.0
2.8
E
1.4
1.2
e
e1 HE Lp
Q
v
1.9
0.95
2.5
2.1
0.45 0.55
0.15 0.45
0.2
w
0.1
OUTLINE
VERSION
SOT23
REFERENCES
IEC
JEDEC
JEITA
TO-236AB
Fig 18. Package outline SOT23 (TO-236AB)
NX3008PBK
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 1 — 1 August 2011
EUROPEAN
PROJECTION
ISSUE DATE
04-11-04
06-03-16
© NXP B.V. 2011. All rights reserved.
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