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SEMiX202GB12E4s fiches techniques PDF

Semikron International - IGBT Modules

Numéro de référence SEMiX202GB12E4s
Description IGBT Modules
Fabricant Semikron International 
Logo Semikron International 





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SEMiX202GB12E4s fiche technique
SEMiX202GB12E4s
SEMiX®2s
Trench IGBT Modules
SEMiX202GB12E4s
Features
• Homogeneous Si
• Trench = Trenchgate technology
• VCE(sat) with positive temperature
coefficient
• High short circuit capability
• UL recognised file no. E63532
Typical Applications
• AC inverter drives
• UPS
• Electronic Welding
Remarks
• Case temperature limited to TC=125°C
max.
• Product reliability results are valid for
Tj=150°C
• Dynamic values apply to the
following combination of resistors:
RGon,main = 1,0
RGoff,main = 1,0
RG,X = 2,2
RE,X = 0,5
Absolute Maximum Ratings
Symbol Conditions
IGBT
VCES
IC
ICnom
ICRM
VGES
tpsc
Tj
Tj = 175 °C
ICRM = 3xICnom
VCC = 800 V
VGE 20 V
VCES 1200 V
Tc = 25 °C
Tc = 80 °C
Tj = 150 °C
Inverse diode
IF
Tj = 175 °C
Tc = 25 °C
Tc = 80 °C
IFnom
IFRM
IFRM = 3xIFnom
IFSM tp = 10 ms, sin 180°, Tj = 25 °C
Tj
Module
It(RMS)
Tstg
Visol
AC sinus 50Hz, t = 1 min
Characteristics
Symbol Conditions
IGBT
VCE(sat)
VCE0
rCE
VGE(th)
ICES
Cies
Coes
Cres
QG
RGint
td(on)
tr
Eon
td(off)
tf
Eoff
Rth(j-c)
IC = 200 A
VGE = 15 V
chiplevel
Tj = 25 °C
Tj = 150 °C
Tj = 25 °C
Tj = 150 °C
VGE = 15 V
Tj = 25 °C
Tj = 150 °C
VGE=VCE, IC = 7.6 mA
VGE = 0 V
VCE = 1200 V
Tj = 25 °C
Tj = 150 °C
VCE = 25 V
VGE = 0 V
f = 1 MHz
f = 1 MHz
f = 1 MHz
VGE = - 8 V...+ 15 V
Tj = 25 °C
VCC = 600 V
IC = 200 A
Tj = 150 °C
Tj = 150 °C
RG on = 2.4
RG off = 2.4
Tj = 150 °C
Tj = 150 °C
di/dton = 3600 A/µs Tj = 150 °C
di/dtoff = 2100 A/µs Tj = 150 °C
per IGBT
Values
1200
314
242
200
600
-20 ... 20
10
-40 ... 175
229
172
200
600
990
-40 ... 175
600
-40 ... 125
4000
Unit
V
A
A
A
A
V
µs
°C
A
A
A
A
A
°C
A
°C
V
min.
5
typ.
1.8
2.2
0.8
0.7
5.0
7.5
5.8
0.1
12.3
0.81
0.69
1130
3.75
253
55
22
533
113
27.9
max. Unit
2.05
2.4
0.9
0.8
5.8
8.0
6.5
0.3
0.14
V
V
V
V
m
m
V
mA
mA
nF
nF
nF
nC
ns
ns
mJ
ns
ns
mJ
K/W
GB
© by SEMIKRON
Rev. 1 – 20.02.2009
1

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