|
|
PDF SEMiX151GB12Vs Data sheet ( Hoja de datos )
| Número de pieza | SEMiX151GB12Vs | |
| Descripción | IGBT Modules | |
| Fabricantes | Semikron International | |
| Logotipo |  |
|
Hay una vista previa y un enlace de descarga de SEMiX151GB12Vs (archivo pdf) en la parte inferior de esta página. Total 5 Páginas | ||
|
No Preview Available !
SEMiX151GB12Vs
SEMiX® 1s
SEMiX151GB12Vs
Features
• Homogeneous Si
• VCE(sat) with positive temperature
coefficient
• High short circuit capability
• UL recognised file no. E63532
Typical Applications*
• AC inverter drives
• UPS
• Electronic Welding
Remarks
• Case temperature limited to TC=125°C
max.
• Product reliability results are valid for
Tj=150°C
Absolute Maximum Ratings
Symbol Conditions
IGBT
VCES
IC
Tj = 25 °C
Tj = 175 °C
Tc = 25 °C
Tc = 80 °C
ICnom
ICRM
ICRM = 3xICnom
VGES
tpsc
Tj
VCC = 720 V
VGE ≤ 15 V
VCES ≤ 1200 V
Tj = 125 °C
Inverse diode
IF
Tj = 175 °C
Tc = 25 °C
Tc = 80 °C
IFnom
IFRM
IFRM = 3xIFnom
IFSM tp = 10 ms, sin 180°, Tj = 25 °C
Tj
Module
It(RMS)
Tterminal = 80 °C
Tstg
Visol AC sinus 50Hz, t = 1 min
Characteristics
Symbol Conditions
IGBT
VCE(sat)
VCE0
rCE
VGE(th)
ICES
Cies
Coes
Cres
QG
RGint
td(on)
tr
Eon
td(off)
tf
Eoff
Rth(j-c)
IC = 150 A
VGE = 15 V
chiplevel
Tj = 25 °C
Tj = 150 °C
Tj = 25 °C
Tj = 150 °C
VGE = 15 V
Tj = 25 °C
Tj = 150 °C
VGE=VCE, IC = 6 mA
VGE = 0 V
VCE = 1200 V
Tj = 25 °C
Tj = 150 °C
VCE = 25 V
VGE = 0 V
f = 1 MHz
f = 1 MHz
f = 1 MHz
VGE = - 8 V...+ 15 V
Tj = 25 °C
VCC = 600 V
IC = 150 A
VGE = ±15 V
RG on = 1
RG off = 1
Tj = 150 °C
Tj = 150 °C
Tj = 150 °C
Tj = 150 °C
di/dton = 4600 A/µs Tj = 150 °C
di/dtoff = 1700 A/µs
du/dtoff = 6700 V/ Tj = 150 °C
µs
per IGBT
Values
1200
231
176
150
450
-20 ... 20
10
-40 ... 175
189
141
150
450
900
-40 ... 175
600
-40 ... 125
4000
Unit
V
A
A
A
A
V
µs
°C
A
A
A
A
A
°C
A
°C
V
min. typ. max. Unit
1.75 2.20 V
2.20 2.5 V
0.94 1.04 V
0.88 0.98 V
5.4 7.7 m
8.8 10.1 m
5.5 6 6.5 V
0.1 0.3 mA
mA
9.0 nF
0.89 nF
0.88 nF
1650
nC
5.00
319 ns
46 ns
19.4 mJ
482 ns
68 ns
17.1 mJ
0.19 K/W
GB
© by SEMIKRON
Rev. 2 – 16.02.2011
1
1 page  
SEMiX151GB12Vs
SEMiX 1s
spring configuration
This is an electrostatic discharge sensitive device (ESDS), international standard IEC 60747-1, Chapter IX
* The specifications of our components may not be considered as an assurance of component characteristics. Components have to be tested
for the respective application. Adjustments may be necessary. The use of SEMIKRON products in life support appliances and systems is
subject to prior specification and written approval by SEMIKRON. We therefore strongly recommend prior consultation of our staff.
© by SEMIKRON
Rev. 2 – 16.02.2011
5
5 Page | ||
| Páginas | Total 5 Páginas | |
| PDF Descargar | [ Datasheet SEMiX151GB12Vs.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| SEMiX151GB12Vs | IGBT Modules | Semikron International |
| Número de pieza | Descripción | Fabricantes |
| SLA6805M | High Voltage 3 phase Motor Driver IC. |
 Sanken |
| SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
 Analog Devices |
|
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
| DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |