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SeCoS Halbleitertechnologie - Low VF Schottky Barrier Rectifiers

Numéro de référence SCK240N
Description Low VF Schottky Barrier Rectifiers
Fabricant SeCoS Halbleitertechnologie 
Logo SeCoS Halbleitertechnologie 





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SCK240N fiche technique
Elektronische Bauelemente
SCK240N
40 V, 1.5A
Low VF Schottky Barrier Rectifiers
RoHS Compliant Product
A suffix of “-C” specifies halogen-free and RoHS Compliant
FEATURES
Batch process design, excellent power dissipation offers
Better reverse leakage current and thermal resistance.
Guardring for overvoltage protection.
Very tiny plastic SMD package.
Super Low Forward Voltage
Silicon epitaxial planar chip, metal silicon junction.
Lead-free parts meet environmental standards of
MIL-STD-19500/228
SOD-323N
A
B
F
D
C
E
E
PACKAGING INFORMATION
Epoxy: UL94-V0 rated flame retardant
Case: Molded plastic, SOD323N
Terminals: Plated terminals,
solderable per MIL-STD-750, method 2026.
MARKING CODE
L4
REF.
A
B
C
Millimeter
Min. Max.
2.30 2.70
1.05 1.45
0.80 1.20
REF.
D
E
F
Millimeter
Min. Max.
1.7 2.1
0.4 TYP
0.30 TYP

Cathode

Anode
PACKAGE INFORMATION
Package
MPQ
SOD-323N
3K
Leader Size
7 inch
MAXIMUM RATINGS (Ta = 25°C unless otherwise specified.)
Parameter
Symbol
Repetitive Peak Reverse Voltage
Maximum RMS Voltage
Maximum Reverse Voltage@ IR=1mA
Maximum Forward Rectified Current
Peak Forward Surge Current, 8.3ms single half sine-wave
superimposed on rated load (JEDEC method)
Typical Thermal Resistance
Storage and Operating Temperature Range
VRRM
VRMS
VR
IO
IFSM
RJA
TSTG, TJ
Rating
40
28
40
1.5
30
80
-55~100, -65~175
Unit
V
V
V
A
A
°C/W
°C
ELECTRICAL CHARACTERISTICS
Parameter
Symbol
Maximum Instantaneous Forward Voltage
VF
Maximum DC Reverse Current
at Rated DC Blocking Voltage
Typical Junction Capacitance 1
Note:
1. f=1MHz and applied 4V DC reverse voltage
IR
CJ
23-Oct-2013 Rev. A
Typ.
240
300
430
65
130
Max.
250
350
450
100
-
Unit
mV
μA
pF
Test Condition
IF=100mA
IF=500mA
IF=2A
TJ=25°C
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