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PDF NE33200 Data sheet ( Hoja de datos )
| Número de pieza | NE33200 | |
| Descripción | SUPER LOW NOISE HJ FET | |
| Fabricantes | California Eastern | |
| Logotipo |  |
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SUPER LOW NOISE HJ FET NE33200
FEATURES
• VERY LOW NOISE FIGURE:
0.75 dB typical at 12 GHz
• HIGH ASSOCIATED GAIN:
10.5 dB Typical at 12 GHz
• GATE LENGTH: 0.3 µm
• GATE WIDTH: 280 µm
DESCRIPTION
The NE33200 is a Hetero-Junction FET chip that utilizes the
junction between Si-doped AlGaAs and undoped InGaAs to
create a two-dimensional electron gas layer with very high
electron mobility. Its excellent low noise figure and high
associated gain make it suitable for commercial and industrial
applications.
NEC's stringent quality assurance and test procedures as-
sure the highest reliability and performance.
NOISE FIGURE & ASSOCIATED
GAIN vs. FREQUENCY
VDS = 2 V, IDS = 10 mA
4 24
3.5
Ga
3
21
18
2.5 15
2 12
1.5 9
1
0.5
0
1
NF
10
Frequency, f (GHz)
6
3
0
30
ELECTRICAL CHARACTERISTICS (TA = 25°C)
PART NUMBER
PACKAGE OUTLINE
NE33200
00 (Chip)
SYMBOLS
PARAMETERS AND CONDITIONS
UNITS
MIN
TYP MAX
NFOPT1
GA1
Noise Figure, VDS = 2 V, ID = 10 mA,
f = 4 GHz
f = 12 GHz
Associated Gain, VDS = 2 V, ID = 10 mA,
f = 4 GHz
f = 12 GHz
dB 0.35
dB 0.75 1.0
dB
dB 9.5
15.0
10.5
P1dB
Output Power at 1 dB Gain Compression Point, f = 12 GHz
VDS = 2 V, IDS = 10 mA
VDS = 2 V, IDS = 20 mA
dBm
dBm
11.2
12.0
G1dB
Gain at P1dB, f = 12 GHz
VDS = 2 V, IDS = 10 mA
VDS = 2 V, IDS = 20 mA
dB 11.8
dB 12.8
IDSS Saturated Drain Current, VDS = 2 V, VGS = 0 V
mA 15 40 80
VP Pinch-off Voltage, VDS = 2 V, ID = 100 µA
V -2.0 -0.8 -0.2
gm
IGSO
RTH(CH-C)2
Transconductance, VDS = 2 V, ID = 10 mA
Gate to Source Leakage Current, VGS = -5 V
Thermal Resistance (Channel to Case)
mS
µA
°C/W
45
70
0.5 10
240
Notes:
1. RF performance is determined by packaging and testing 10 samples per wafer. Wafer rejection criteria for standard devices is 2 rejects for
10 samples.
2. Chip mounted on infinite heat sink.
California Eastern Laboratories
1 page  
NE33200 LINEAR MODEL
SCHEMATIC
LG RG
0.19
GATE
0.16
GGS
1E-5
CDG
0.04
CGS CDC
0.22 0.065
RI
0.52
NE33200
RDS
g
t
f= 281GHz
RD
0.24
LD
0.2
DRAIN
CDS
0.05
RS
0.19
LS
0.03
SOURCE
BIAS DEPENDENT MODEL PARAMETERS
Parameters
g
t
RDS
2 V, 10 mA
73 mS
2.5 pSec
220 ohms
2 V, 20 mA
96 mS
3.5 pSec
160 ohms
UNITS
Parameter
capacitance
inductance
resistance
conductance
Units
picofarads
nanohenries
ohms
millisiemans
MODEL RANGE
Frequency: 0.1 to 26.5 GHz
Bias:
VDS = 2 V, ID = 10, 20 mA
Date:
7/19/96
5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet NE33200.PDF ] | |
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