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SEMiX603GAR066HDs Datasheet دیتاشیت PDF دانلود

دیتاشیت - Semikron - Trench IGBT Modules

شماره قطعه SEMiX603GAR066HDs
شرح مفصل Trench IGBT Modules
تولید کننده Semikron 
آرم Semikron 


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SEMiX603GAR066HDs شرح
SEMiX603GAR066HDs
SEMiX® 3s
Trench IGBT Modules
SEMiX603GAR066HDs
Features
• Homogeneous Si
• Trench = Trenchgate technology
• VCE(sat) with positive temperature
coefficient
• UL recognised file no. E63532
Typical Applications*
• Matrix Converter
• Resonant Inverter
• Current Source Inverter
Remarks
• Case temperature limited to TC=125°C
max.
• Product reliability results are valid for
Tj=150°C
• For short circuit: Soft RGoff
recommended
• Take care of over-voltage caused by
stray inductance
Absolute Maximum Ratings
Symbol Conditions
IGBT
VCES
IC
ICnom
ICRM
VGES
tpsc
Tj
Tj = 175 °C
ICRM = 2xICnom
VCC = 360 V
VGE 15 V
VCES 600 V
Tc = 25 °C
Tc = 80 °C
Tj = 150 °C
Inverse diode
IF
Tj = 175 °C
Tc = 25 °C
Tc = 80 °C
IFnom
IFRM
IFRM = 2xIFnom
IFSM tp = 10 ms, sin 180°, Tj = 25 °C
Tj
Freewheeling diode
IF
Tj = 175 °C
Tc = 25 °C
Tc = 80 °C
IFnom
IFRM
IFRM = 2xIFnom
IFSM tp = 10 ms, sin 180°, Tj = 25 °C
Tj
Module
It(RMS)
Tstg
Visol
AC sinus 50Hz, t = 1 min
Characteristics
Symbol Conditions
IGBT
VCE(sat)
VCE0
rCE
VGE(th)
ICES
Cies
Coes
Cres
QG
RGint
IC = 600 A
VGE = 15 V
chiplevel
Tj = 25 °C
Tj = 150 °C
VGE = 15 V
Tj = 25 °C
Tj = 150 °C
Tj = 25 °C
Tj = 150 °C
VGE=VCE, IC = 9.6 mA
VGE = 0 V
VCE = 600 V
Tj = 25 °C
Tj = 150 °C
VCE = 25 V
VGE = 0 V
f = 1 MHz
f = 1 MHz
f = 1 MHz
VGE = - 8 V...+ 15 V
Tj = 25 °C
Values
600
720
541
600
1200
-20 ... 20
6
-40 ... 175
771
562
600
1200
1800
-40 ... 175
795
577
600
1200
1800
-40 ... 175
600
-40 ... 125
4000
Unit
V
A
A
A
A
V
µs
°C
A
A
A
A
A
°C
A
A
A
A
A
°C
A
°C
V
min.
5
typ.
1.45
1.7
0.9
0.85
0.9
1.4
5.8
0.15
37.0
2.31
1.10
4800
0.67
max. Unit
1.85
2.1
1
0.9
1.4
2.0
6.5
0.45
V
V
V
V
m
m
V
mA
mA
nF
nF
nF
nC
GAR
© by SEMIKRON
Rev. 0 – 16.04.2010
1

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